STM-study of triangular defect structures induced on WSe2

Enss, C.; Winters, Robert R.; Reinermann, M.; Weiß, G.; Hunklinger, Siegfried; Lux‐Steiner, M.

doi:10.1007/bf02769981

Cited by 2 publications

(4 citation statements)

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“…Although similar vacancy growth has already been seen on some TMDs through both STM and AFM measurements [33][34][35][36][37][38][39][40][41][42]. It is the first time that a direct correlation between preferential electrical stressing at vacancy island edges and the observed growth rate has been established.…”

Section: Resultssupporting

confidence: 53%

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe₂

et al. 2018

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To ensure practical applications of atomically thin transition metal dichalcogenides, it is essential to characterize their structural stability under external stimuli such as electric fields and currents. Using vacancy monolayer islands on TiSe surfaces as a model system, we have observed nonlinear area evolution and growth from triangular to hexagonal driven by scanning tunneling microscopy (STM) subjected electrical stressing. The observed growth dynamics represent a 2D departure from the linear area growth law expected for bulk vacancy clustering. Our simulations of monolayer island evolution using phase-field modeling and first-principles calculations are in good agreement with our experimental observations, and point toward preferential edge atom dissociation under STM scanning driving the observed nonlinear area growth. We further quantified a parabolic growth rate dependence with respect to the tunneling current magnitude. The results could be potentially important for device reliability in systems containing ultrathin transition metal dichalcogenides and related 2D materials subject to electrical stressing.

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Section: Resultssupporting

confidence: 53%

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe₂

et al. 2018

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“…For example, in WSe 2 an electrochemical reaction can be induced using an STM or biased AFM tip between the sample and the surface water layer. 27,29,31 NbSe 2 also appears to readily undergo a chemical reaction in the presence of sufficient humidity. 32,33 However, in NbSe 2 the STM appears to enhance an existing reaction between the sample surface and the surrounding air.…”

Section: Introductionmentioning

confidence: 99%

“…STM has been used to remove material from dichalcogenide surfaces in a variety of ways. Voltage pulses can be used to create nanometer-scale features in a variety of dichalcogenides. ,,− Voltage pulses induce surface modifications in both air and vacuum, although the voltage threshold is generally found to be lower for measurements performed in air . Other methods for using an STM to induce etching also appear to be strongly influenced by the scanning environment.…”

Section: Introductionmentioning

confidence: 99%

“…Other methods for using an STM to induce etching also appear to be strongly influenced by the scanning environment. For example, in WSe 2 an electrochemical reaction can be induced using an STM or biased AFM tip between the sample and the surface water layer. ,, NbSe 2 also appears to readily undergo a chemical reaction in the presence of sufficient humidity. , However, in NbSe 2 the STM appears to enhance an existing reaction between the sample surface and the surrounding air. In many dichalcogenides, surface layers are removed under ambient conditions by STM during typical scanning conditions. ,,− The etching rate for this process is very material dependent, with some systems etching quickly, some not at all, and others requiring a threshold bias voltage.…”

Section: Introductionmentioning

confidence: 99%

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Dopant Enhanced Etching of TiSe₂ by Scanning Tunneling Microscopy

Kidd¹,

Gamb²,

Skirtachenko³

et al. 2010

Langmuir

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The surfaces of pure and Mn doped TiSe(2) were etched using a scanning tunneling microscope. Both types of samples were found to etch easily when scanning was performed in ambient conditions. This process was enhanced at step edges or other surface defects. In pure samples, material was removed in a layer-by-layer fashion with a strong dependence on the scanning direction of the tip. Doped samples etched far more rapidly, to the point that stable scanning conditions were difficult to establish. Doped samples also showed a greater number of pits and other defects on their surface. A relatively small percentage of dopants was necessary to strongly impact the surface topography and stability. These results show that impurities can play a dominant role when using scanning tunneling microscopy to create surface nanostructures.

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STM-study of triangular defect structures induced on WSe2

Cited by 2 publications

References 14 publications

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe₂

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe₂

Dopant Enhanced Etching of TiSe₂ by Scanning Tunneling Microscopy

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STM-study of triangular defect structures induced on WSe2

Cited by 2 publications

References 14 publications

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2

Dopant Enhanced Etching of TiSe2 by Scanning Tunneling Microscopy

Contact Info

Product

Resources

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Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe₂

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe₂

Dopant Enhanced Etching of TiSe₂ by Scanning Tunneling Microscopy