Stochastic defect removal coating for high-performance extreme ultraviolet lithography

Choi, Young Joo; Namgung, Ran; Kim, Jun Soo; Song, Dae Seok; Park, Hyeon; Bae, Shin-hyo; Chon, Min-Ki; Kim, Min Soo; Song, Hyun-Ji; Kim, Hyun Woo; Hong, Suk Koo

doi:10.1116/6.0001723

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…Moreover, the low throughput of photons leads to the enhanced contribution of photon shot noise, resulting in increasing stochastic pattern variations [ 40 ]. However, there is continued research into overcoming these issues, for example by producing alternative high power light sources [ 104 ], improving the conversion efficiency from laser energy to EUV radiation [ 105 , 106 ] and reducing defects through improved photoresists [ 107 , 108 ] and coatings such as stochastic defect removal coatings [ 109 ].…”

Section: Conventional Lithographic Techniquesmentioning

confidence: 99%

Advances in lithographic techniques for precision nanostructure fabrication in biomedical applications

Stokes,

Clark,

Odetade

et al. 2023

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Nano-fabrication techniques have demonstrated their vital importance in technological innovation. However, low-throughput, high-cost and intrinsic resolution limits pose significant restrictions, it is, therefore, paramount to continue improving existing methods as well as developing new techniques to overcome these challenges. This is particularly applicable within the area of biomedical research, which focuses on sensing, increasingly at the point-of-care, as a way to improve patient outcomes. Within this context, this review focuses on the latest advances in the main emerging patterning methods including the two-photon, stereo, electrohydrodynamic, near-field electrospinning-assisted, magneto, magnetorheological drawing, nanoimprint, capillary force, nanosphere, edge, nano transfer printing and block copolymer lithographic technologies for micro- and nanofabrication. Emerging methods enabling structural and chemical nano fabrication are categorised along with prospective chemical and physical patterning techniques. Established lithographic techniques are briefly outlined and the novel lithographic technologies are compared to these, summarising the specific advantages and shortfalls alongside the current lateral resolution limits and the amenability to mass production, evaluated in terms of process scalability and cost. Particular attention is drawn to the potential breakthrough application areas, predominantly within biomedical studies, laying the platform for the tangible paths towards the adoption of alternative developing lithographic technologies or their combination with the established patterning techniques, which depends on the needs of the end-user including, for instance, tolerance of inherent limits, fidelity and reproducibility.

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Section: Conventional Lithographic Techniquesmentioning

confidence: 99%

Advances in lithographic techniques for precision nanostructure fabrication in biomedical applications

Stokes,

Clark,

Odetade

et al. 2023

Discover Nano

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“…Although the trade-off relationships are still a problem, the suppression of stochastic defects is currently the most serious issue in the development of EUV resists. [5][6][7][8][9][10] The stochastic defects are generated because the formation of resist patterns is a consequence of stochastic processes.…”

Section: Introductionmentioning

confidence: 99%

Defect risks at interfaces of chemically amplified resists in extreme ultraviolet lithography process

Kozawa

2023

Jpn. J. Appl. Phys.

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In extreme ultraviolet (EUV) lithography, stochastically generated defects (stochastic defects) are a significant issue. In this study, the formation of the latent images of line-and-space resist patterns was simulated to assess the dependence of defect risks on the conditions of resist interfaces. The protected unit distribution was calculated on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists using a Monte Carlo method. The pinching and bridging risks were calculated to be 7.4×10-3-2.0×10-2 and 1.5×10-3-2.6×10-1, respectively, depending on the boundary conditions of low-energy secondary electrons at the interfaces. Using the obtained defect risks, we roughly estimated that the impacts of interfacial effects on pinching and bridging probabilities for low-energy secondary electrons were more than one order of magnitude and more than six orders of magnitude, respectively. Controlling the low-energy electrons at the interfaces is important for the suppression of stochastic defects.

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“…1) However, this technology has also highlighted the challenges arising from such smaller features, namely, the stochastically generated defects on resist patterns. [2][3][4][5][6][7] Line-and-space (L/S) patterns are important design features with numerous applications, including the manufacturing of microprocessors and memory chips. Defects can arise on L/S patterns for a variety of reasons during lithography.…”

Section: Introductionmentioning

confidence: 99%

Analysis of resist images with pattern defects by Hough transform

Jin

Kozawa

Aoki

et al. 2023

Jpn. J. Appl. Phys.

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Extreme ultraviolet (EUV) technology has led to smaller device features, emphasizing the importance of minimizing defects in production. Research has focused on improving resist material uniformity to address variability in resulting patterns caused by stochastic factors, with attention paid to the underlying chemistry. In this study, we developed an automated method for analyzing resist patterns with defects using image recognition techniques. This method involves the analysis of line-and-space resist patterns using image processing technologies, comparison using established standards, and the identification of patterns with defects. A modified version of Hough transform technique was employed to automatically analyze approximately 2500 scanning electron microscopy images. Using our method, we can identify defective and deformed patterns by comparing the detected line-and-space resist patterns with the established standard. The indices that characterize the resist patterns with defects are proposed. Finally, simulated images were also used to uncover the chemical information underlying defective resist patterns.

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Stochastic defect removal coating for high-performance extreme ultraviolet lithography

Cited by 3 publications

References 31 publications

Advances in lithographic techniques for precision nanostructure fabrication in biomedical applications

Advances in lithographic techniques for precision nanostructure fabrication in biomedical applications

Defect risks at interfaces of chemically amplified resists in extreme ultraviolet lithography process

Analysis of resist images with pattern defects by Hough transform

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