2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) 2013
DOI: 10.1109/nanoarch.2013.6623051
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Stochastic neuron design using conductive bridge RAM

Abstract: We present an original methodology to design hybrid neuron circuits (CMOS + non volatile resistive memory) with stochastic firing behaviour. In order to implement stochastic firing, we exploit unavoidable intrinsic variability occurring in emerging non-volatile resistive memory technologies. In particular, we use the variability on the 'time-to-set' (tset) and 'off-state resistance' (R Off) of Ag/GeS2 based Conductive Bridge (CBRAM) memory devices. We propose a circuit and a novel self-programming technique fo… Show more

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Cited by 25 publications
(16 citation statements)
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“…Our proposed architecture works for stochastic computing as well, however, a stochastic firing mechanism is needed for the silicon neuron implementation instead of deterministic firing. Leveraging the stochastic behavior of nano-devices, a solution was proposed in [77] but its hardware realization feasibility still needs evaluation. Finally, it should be noted that the circuit-level simulations with faithful modeling of electrical behavior consumes significant amount of time as well as computing resources.…”
Section: Discussionmentioning
confidence: 99%
“…Our proposed architecture works for stochastic computing as well, however, a stochastic firing mechanism is needed for the silicon neuron implementation instead of deterministic firing. Leveraging the stochastic behavior of nano-devices, a solution was proposed in [77] but its hardware realization feasibility still needs evaluation. Finally, it should be noted that the circuit-level simulations with faithful modeling of electrical behavior consumes significant amount of time as well as computing resources.…”
Section: Discussionmentioning
confidence: 99%
“…Hence, there is no need to dissipate additional power on flushing the membrane capacitance, . Interestingly, memristive stochasticity has already been proposed to introduce variability in the spike trains generated by I&F neurons through random changes of the membrane time constant [39]. Even though this approach begins with a similar motivation, it leads to a different neuron model, namely, leaky I&F model with a time-dependent time constant [64], and hence is different from our proposal.…”
Section: Comparison To the Alternative Proposalsmentioning
confidence: 89%
“…Previously, deterministic memristor models were used to build action potential formation mechanisms similar to Hodgkin-Huxley model [36], [37]. It was also proposed that memristive stochasticity could be used to build binary and continuous-value nonspiking artificial neurons [38] and for adding variability to spike trains generated by leaky I&F neurons [39]. Among other contributions and in contrast to the previous proposals, our design utilizes abrupt memristive switching directly for generating spontaneous events that can be further shaped into spikes.…”
Section: Introductionmentioning
confidence: 99%
“…Zhang et al [96] present an approach for energy-efficient neuromorphic computing for stochastic learning using multiple perpendicular in-plane magnetic tunnel junctions. Binary Conductive-Bridge RAM (CBRAM) synapses for bio-inspired computing has been presented by Suri et al [97,98], while Querlioz et al [99] discuss stochastic resonance in an analog current-mode circuit.…”
Section: Analog Implementationsmentioning
confidence: 99%