Stochastic resonance in the Gunn effect

Shiau, Yuo-Hsien

doi:10.1103/physrevb.60.15534

Cited by 7 publications

(7 citation statements)

References 7 publications

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“…However, at some circumstances the multiple domains can also be generated [3,4] and this operating regime to some approximation can be treated in terms of harmonic wave process.…”

Section: The Model and Basic Equations Of Light Diffraction By Scwmentioning

confidence: 99%

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Optoelectronic Device Based on Gunn Effect Extended Diode Structure

Tralle

2007

Acta Phys. Pol. A

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We discuss the possibility of light control by means of light diffraction by space charge waves which are the periodic domain trains induced at some circumstances in GaAs Gunn effect diode. The two possible regimes of the proposed device are considered: the first one which is analogous to the Bragg diffraction in case of light-acoustic diffraction and the other one, which we call "intermediate", since the parameter Q which distinguishes the Raman-Nath (Q < 1) and the Bragg diffraction (Q > 10), in this case is ≈ 1 (actually, only bit smaller than 1). Among the advantages of this hypothetical device are the simpler control of operation and perhaps, possibility to couple it with the waveguides and switchers for surface electromagnetic waves and other miniaturized photonic circuits.

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“…However, at some circumstances the multiple domains can also be generated [3,4] and this operating regime to some approximation can be treated in terms of harmonic wave process.…”

Section: The Model and Basic Equations Of Light Diffraction By Scwmentioning

confidence: 99%

“…The well-known example of such SCWs are the plasmons induced in semiconductor plasma [2]. Another type of charge movement which looks like moving waves are the periodic domain trains induced at some circumstances in GaAs Gunn effect amplifier [3,4].…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Device Based on Gunn Effect Extended Diode Structure

Tralle

2007

Acta Phys. Pol. A

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“…Several other works have also been reported in the literature describing and explaining the nonlinear dynamics of a GO [11,12]. It is well known that bifurcation and chaos are observed in a GO under the influence of external periodic driving signals when the GO is operating in the normal active region [5,15].…”

Section: Introductionmentioning

confidence: 98%

Some Numerical and Experimental Observations on the Growth of Oscillations in an X-Band Gunn Oscillator

Sarkar¹,

Koley²,

Guin³

et al. 2012

PIER B

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Abstract-The dynamics of the onset of oscillations in a wave guide cavity based Gunn Oscillator (GO) has been critically examined through numerical simulations and experimental studies.The transition of the GO from a non-oscillatory to an oscillatory state and the same in the reverse direction occurs at different critical values of the dc bias voltage applied to the GO. In presence of a weak RF field in GO cavity, oscillations with broad band continuous spectrum and multiple discrete line spectrum are observed at the GO output for different values of dc bias below the above mentioned critical values. Analysing the numerically obtained time series data, chaos quantifiers have been obtained to prove the occurrence of the chaotic oscillations in the GO. Experimental results and observations of numerical simulation show good qualitative agreement.

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“…Application of strong electric field and spatially nonuniform illumination results in novel nonlinear phenomena in semiconductor, e.g., the domain instabilities and photocurrent oscillations at GHz frequencies [1,2]. Recent theoretical investigations revealed a possibility for enhancement of the response of nonlinear system and generation of the oscillating current pulses from the NDR semiconductor under excitation by light-interference pattern [3][4][5]. Nonlinear response of the system can be very complex, and one can obtain several types of the domain instabilities: periodic with the fundamental frequency, periodic with a number of harmonics, and chaotic [3].…”

Section: Introductionmentioning

confidence: 99%

Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating

Subačius¹,

Kašalynas²

2005

Acta Phys. Pol. A

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Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.

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Stochastic resonance in the Gunn effect

Cited by 7 publications

References 7 publications

Optoelectronic Device Based on Gunn Effect Extended Diode Structure

Optoelectronic Device Based on Gunn Effect Extended Diode Structure

Some Numerical and Experimental Observations on the Growth of Oscillations in an X-Band Gunn Oscillator

Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating

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