Stoichiometry Driven Impurity Configurations in Compound Semiconductors

Chen, G.; Miotkowski, I.; Rodríguez, S.; Ramdas, A. K.

doi:10.1103/physrevlett.96.035508

Cited by 19 publications

(17 citation statements)

References 14 publications

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“…6,7 Recently, Chen et al performed a Fourier-transformed infrared (FTIR) absorption study of CdTe grown by the vertical Bridgman technique. 8,9 The samples were synthesized from pure CdTe and appropriate amounts of TeO 2 or CdO. A number of IR absorption lines was observed and assigned to different oxygen-related complexes.…”

Section: Introductionmentioning

confidence: 99%

Reassignment of the OTe-VCdcomplex in CdTe

et al. 2011

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An IR absorption study of single-crystal CdTe annealed in CdSO 4 vapor at 850 • C is presented. It is shown that such a treatment results in the appearance of two absorption lines ν 1 and ν 2 at 1096.8 and 1108.4 cm −1 , respectively [G. Chen et al., Phys. Rev. Lett. 96, 035508 (2006); Phys. Rev. B 75, 125204 (2007)]. Each of these features is accompanied by weaker lines. The intensities of each set of lines match the natural abundance of the sulfur isotopes. The ν 1 and ν 2 modes are assigned to the stretch vibrations of a sulfur-oxygen complex, SO * 2 . The number of oxygen atoms involved in SO * 2 was deduced from the relative intensity of an IR absorption line related to the 18 O isotope.

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Section: Introductionmentioning

confidence: 99%

Reassignment of the OTe-VCdcomplex in CdTe

et al. 2011

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“…Under certain circumstances a light substitutional impurity in association with the vacancy displays unique infrared signatures characteristic of localized vibrational modes (LVMs). We recently reported [2] such LVMs of oxygen imputities in CdTe in which oxygen substitutionaly replaced a tellurium host atom (O Te ), the nearest neighbors (NN) then being the four Cd atoms as O Te , or in association with a Cd vacancy in one of the NN site as (O Te À V Cd ). The former has T d site symmetry with a single triply degenerate LVM whereas the latter displays two LVMs consistent with its C 3v symmetry [3].…”

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confidence: 99%

“…This is often a prerequisite for the deliberate incorporation of specific impurities in desired concentrations. Native defects often behave like donors or acceptors; Cd vacancies in CdTe and Se vacancies in CdSe [1,2] are reported to be acceptors and donors, respectively. Under certain circumstances a light substitutional impurity in association with the vacancy displays unique infrared signatures characteristic of localized vibrational modes (LVMs).…”

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confidence: 99%

Spectroscopic Signatures of Novel Oxygen-Defect Complexes in Stoichiometrically Controlled CdSe

Chen

Bhosale²,

Miotkowski³

et al. 2008

Phys. Rev. Lett.

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“…It is shown that a sulfur-dioxygen (SO * 2 ) complex is the most plausible candidate for the γ-lines. Note that a similar situation was reported in CdTe where two absorption lines originally attributed to the LVMs of a O Te -V Cd complex [10,11] were recently reassigned to LVMs of different orientations of a SO * 2 in the host lattice [12].…”

Section: Introductionmentioning

confidence: 73%

Reassignment of the OSe−VCd complex in CdSe

Bastin¹,

Lavrov²,

Weber³

2014

AIP Conference Proceedings

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An IR absorption study of CdSe single crystals is presented. The as-received material revealed three absorption lines at 1094.2, 1107.5, and 1126.3 cm −1 , which were previously assigned to the O Se -V Cd complex [G. Chen et al., Phys. Rev. Lett. 101, 195502 (2008)] We show that each of the lines is accompanied by a number of weaker satellites with intensities which match the natural abundances of sulfur isotopes. In contrast to the original identification it is suggested that these peaks are local vibrational modes of a SO n complex. The three modes correspond to different orientations of the complex in the CdSe lattice. Arguments are presented in favor of 2 oxygen atoms (n = 2) in the complex. Measurements with uniaxial stress applied to the samples revealed defect symmetries and activation energies for the defect reorientation. The complex was found to be stable up to 750 • C.

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Stoichiometry Driven Impurity Configurations in Compound Semiconductors

Cited by 19 publications

References 14 publications

Reassignment of the OTe-VCdcomplex in CdTe

Reassignment of the OTe-VCdcomplex in CdTe

Spectroscopic Signatures of Novel Oxygen-Defect Complexes in Stoichiometrically Controlled CdSe

Reassignment of the OSe−VCd complex in CdSe

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