Stoichiometry variation for the atomic layer deposition of SrxTiyOz from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O

Rentrop, Solveig; Abendroth, Barbara; Walter, Juliane; Münchgesang, Wolfram; Strohmeyer, Ralph; Stöcker, Hartmut; Ronning, Carsten; Gemming, Sibylle; Meyer, Dirk C.

doi:10.1016/j.tsf.2015.01.053

Cited by 4 publications

(3 citation statements)

References 44 publications

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“…[123] More recently, Sr precursors with cyclopentadienyl ligands, such as Sr(t-Bu 3 Cp) 2 and Sr(i-Pr 3 Cp) 2 , were applied in STO ALD. [32,[125][126][127] The Sr(i-Pr 3 Cp) 2 precursor, in particular, was successfully implemented in high-temperature STO ALD (370 °C). [123] When using the cyclopentadienyl Sr precursor, a high GPC of 1.07 Å/cycle was obtained for the growth of the STO thin films, which was approximately seven times higher than that of Sr(tmhd) 2 .…”

Section: Tio 2 and Al-doped Tiomentioning

confidence: 99%

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Kim

Sung

Jeon

et al. 2022

Adv Materials Technologies

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Dynamic random access memories (DRAMs) are currently used as the core memory in computing systems because of their high speed and density. Their demand should continue to grow owing to increased data usage. A unit cell in a DRAM consists of one transistor and one capacitor, and the data are stored in the capacitor. As the size of the unit cell decreases to improve the memory density by aggressive scaling, it is important to secure sufficient capacitance in the capacitor. In this regard, technological advances in the fabrication of capacitors are of great importance; accordingly, the materials and processing of high‐k thin films require developmental innovations. Besides, it is necessary to develop electrode materials that optimize the function of high‐k thin films. In this review, recent advances in achieving sufficient capacitance in DRAM capacitors are summarized from structural and material/process perspectives, and the future direction of DRAM capacitor development is discussed. Atomic layer deposition (ALD) is a key technique that enables the growth of functional thin films for DRAM capacitors; thus, recent advances in the deposition of high‐k and electrode thin films grown using the ALD technique are addressed.

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Section: Tio 2 and Al-doped Tiomentioning

confidence: 99%

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Kim

Sung

Jeon

et al. 2022

Adv Materials Technologies

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“…Hence the variation in the temperature at which this background intensity vanishes is attributed to different degrees of structural and compositional ordering in the as-deposited layers. Consistently, an even higher degree of chemical order in the as-deposited layer can be achieved by using atomic layer deposition, which further increases the crystallization temperature (Rentrop et al, 2015). Because of the combination of low particle energy and inhomogeneous evaporation, only a randomly distributed fraction of the EBE layers' volume exhibits stoichiometry close to SrTiO 3 .…”

Section: Discussionmentioning

confidence: 93%

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Hanzig

Mehner

et al. 2015

J Appl Cryst

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Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO 2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO 3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO 3 layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO 3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO 3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

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“…With the increasing interest in higher‐permittivity materials for the next‐generation dielectrics of the dynamic random access memory (DRAM) capacitor, the atomic layer deposition (ALD) of SrTiO 3 (STO) films has been intensively studied . To derive their advantages compared to the other high‐ k dielectric candidates, the STO films should be well crystallized into a perovskite structure to achieve a dielectric constant higher than 100 in thin films .…”

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confidence: 99%

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO₃ Thin Films

Kim

Lee

et al. 2019

Physica Rapid Research Ltrs

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SrTiO3 (STO) films are grown via atomic layer deposition at 370 °C with a two‐step growth method. A 5‐nm‐thick seed layer is first deposited and annealed via rapid thermal annealing (RTA) at temperatures ranging from 450 to 650 °C, and the main layer is subsequently grown on the annealed seed layer for in situ crystallization. When the RTA temperature is 500 °C or lower, the seed layer remains amorphous, and the main layer is also grown in the amorphous phase. At the 550 °C seed annealing temperature, the STO film is partially crystallized, and at the higher annealing temperature, the STO main layer is fully crystallized. The oxygen diffuses through the vertically aligned grain‐boundaries during the crystallized film growth, which induces the oxidation–reduction reaction of the underlying Ru substrate. This reaction causes a higher growth rate in the crystalline phase. The large growth rate difference between the amorphous and crystalline regions induces a severe roughening of the main layer. When RTA is done at 600 °C, the film is mostly crystallized, and the main layer becomes smooth again. Consequently, a 0.52 nm equivalent oxide thickness is achieved with the low leakage current of 2.5 × 10−8 A cm−2 at the 0.8 V applied bias.

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Stoichiometry variation for the atomic layer deposition of SrxTiyOz from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O

Cited by 4 publications

References 44 publications

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO₃ Thin Films

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Stoichiometry variation for the atomic layer deposition of SrxTiyOz from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O

Cited by 4 publications

References 44 publications

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO3 Thin Films

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Product

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Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO₃ Thin Films