Stokes and anti-Stokes photoluminescence towards five different Inx(Al0.17Ga0.83)1−xAs∕Al0.17Ga0.83As quantum wells

Abstract

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Influence of High-Energy Electron Beam on Source Fluxes during Molecular Beam Epitaxy Growth on Photoluminescence Upconversion from the GaAs Band Gap

“…Although upconversion for relatively low excitation densities from the GaAs band gap in GaAs/Al x Ga 1Àx As heterojunctions has already been reported, [2][3][4][5] the detailed origin seems to be unclear. Upconversion due to hot carrier interactions 6) is a minor process in this regime and will not be considered here.…”