Stopping power of GaAs for swift protons: Dielectric function and optical-data model calculations

Molecular dynamics simulation of AFM tip-based hot scratching of nanocrystalline GaAs

“…Gallium arsenide (GaAs) has emerged as a favorable III-V semiconductor compound due to its application in 5G communication devices [1]. GaAs possesses superior physical characteristics such as high-temperature resistance [2], high stopping power [3], high radiation resistance [4], high electronic mobility [5], high magnetic field sensitivity [6] and large band-gap [7]. However, its relatively high nanoindentation hardness (6.9 GPa), elastic modulus (103 GPa) and low fracture toughness (KIC=0.…”