Stopping power of He ions in niobium from a comparison of RBS and X-ray reflectivity measurements

Baving, P.; Becker, Hans‐Werner; Rolfs, C.; Zabel, H.

doi:10.1016/s0168-583x(02)00787-5

Cited by 4 publications

(1 citation statement)

References 12 publications

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“…The backscattered particles were measured at an angle of 170° by a Si detector with a resolution of 16 keV. The stoichiometry of the films was calculated using the program RBX, and new values for the stopping power of Nb and Ta have been used. The composition of the films was determined by depth-profiling using SNMS measurements employing a VG SIMSLABB IIIA instrument [MATS (UK) Ltd.].…”

Section: Methodsmentioning

confidence: 99%

Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition

et al. 2007

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The stabilization of the reactive amide complexes of niobium and tantalum with malonates as chelating ligands leads to stable six-coordinated monomeric complexes ([M(NMe2)4(dbml)]; M = Nb, Ta), namely tetrakis(dimethylamido)(di-tert-butylmalonato)niobium(V) (1) and tetrakis(dimethylamido)(di-tert-butylmalonato)tantalum(V) (2). Compounds 1 and 2 were characterized by 1H NMR, 13C NMR, EI-mass spectroscopy, elemental analysis, and single-crystal X-ray diffraction studies. The thermal properties of the compounds were studied by thermogravimetric analysis. Both the complexes possess good thermal characteristics, improved resistance to air and moisture, and high solubility and stability in solvents compared to their respective parent alkyl amides. Compound 1 was studied for metalorganic chemical vapor deposition (MOCVD) of Nb2O5 while compound 2 was studied for liquid injection metalorganic chemical vapor deposition (LI-MOCVD) of Ta2O5 thin films. The films were deposited at substrate temperatures from 400 to 800 °C, and for both Nb2O5 and Ta2O5 the maximum growth rate was at 600 °C. The films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy for their crystallinity and morphology. Thin film composition was analyzed by X-ray photoelectron spectroscopy, Rutherford backscattering, and depth profiling the composition with secondary neutral mass spectrometry. Electrical properties of the films were studied in terms of the C–V characteristics.

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Section: Methodsmentioning

confidence: 99%

Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition

et al. 2007

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Accurate stopping power determination of 15N ions for hydrogen depth profiling by a combination of ion beams and synchrotron radiation

Zier

Reinholz

Riesemeier

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence

Klockenkämper

Becker

Bohlen

et al. 2005

Journal of Applied Physics

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The implantation of ions in solids is of high technical relevance. The different effects within the solid target caused by the ion bombardment can be investigated by depth profiling of near-surface layers. As and Co ions were implanted in Si wafers: As ions with a fluence of 1×1017∕cm2 and an energy of 100keV and Co ions with 1×1016∕cm2 at 25keV. Subsequently depth profiling was carried out by Rutherford backscattering spectrometry as well as by total-reflection x-ray fluorescence analysis which was combined with differential weighing and interferometry after repeated large-surface sputter etching. Over and above the amorphization of the Si crystal, two other essential effects were observed: (i) a swelling or expansion of the original Si crystal in the near-surface region, in particular in the case of the As implantation, and (ii) a shrinking or compression of the Si crystal for deeper sublayers especially distinct for the Co implantation. On the other hand, a high surface enrichment of implanted ions was found for the As implantation while only a low surface concentration was detected for the Co implantation.

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Stopping power of He ions in niobium from a comparison of RBS and X-ray reflectivity measurements

Cited by 4 publications

References 12 publications

Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition

Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition

Accurate stopping power determination of 15N ions for hydrogen depth profiling by a combination of ion beams and synchrotron radiation

Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence

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