Stopping powers for 20–140 keV H+ and He+ on Ni, Ag and Au

Thompson, David A.; Poehlman, W.F.S.; Presunka, Paul I.; Davies, John

doi:10.1016/0029-554x(81)91047-8

Cited by 9 publications

(4 citation statements)

References 16 publications

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“…makes it difficult to validate our predictive result below this velocity regime. For higher velocity, our calculated results are in agreement with experimental data 27,33,58,[61][62][63] .…”

supporting

confidence: 89%

Electronic stopping power of protons and alpha particles in nickel

Quashie

Correa

2018

Phys. Rev. B

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supporting

confidence: 89%

Electronic stopping power of protons and alpha particles in nickel

Quashie

Correa

2018

Phys. Rev. B

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“…The average energy loss in unit length (dE/dx), which is called electronic stopping power, depends on the type and speed of the projectile and the composition and density of the target material . It can be determined with the transmission method by measuring the energy reduction before and after passing through the thin film or the backscattering peak height or width . The published electronic stopping data have been collected and made available to the public in the International Atomic Energy Agency (IAEA) website by Paul .…”

Section: Principles Of Quantitative Meis Analysismentioning

confidence: 99%

“…16 It can be determined with the transmission method by measuring the energy reduction before and after passing through the thin film 17 or the backscattering peak height 18 or width. 19,20 The published electronic stopping data have been collected [21][22][23][24][25][26][27][28][29][30][31][32][33] and made available to the public in the International Atomic Energy Agency (IAEA) website by Paul. 34 Ziegler, Biersack, and Littmark (ZBL) created a semiempirical database by integrating vast amounts of experimental data, which has now evolved into the SRIM 6 program.…”

Section: Principles Of Quantitative Meis Analysismentioning

confidence: 99%

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO₂/SiO₂/Si films

Min¹,

Marmitt

Grande

et al. 2019

Surface & Interface Analysis

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Medium‐energy ion scattering (MEIS) has been used for quantitative depth profiling with single atomic layer resolution to determine the composition, thickness, and interface structure of ultrathin films and nanoparticles. To assure the consistency of the MEIS analysis, an international round‐robin test (RRT) with nominally 1‐, 3‐, 5‐, and 7‐nm thick HfO2 films was conducted among 12 institutions. The measurements were performed at each participating laboratory under their own conditions, and the collected data were analyzed. For the data analysis, the Moliere potential, the stopping and range of ions in matter (SRIM) 95 and new fitted electronic stopping power and the Chu straggling were used. For analyzing the MEIS data from the magnetic sector and electrostatic analyzers, the neutralization corrections of Marion and Young for 100‐keV H+ and He+ ions and of Armstrong for 400‐ to 500‐keV He+ ions were used. The standard deviations were 5.3% for the composition, 15.3% for the thickness, and 13.3% for the Hf content, and they were improved to 7.3%, 4.5%, and 7.0% by using refitted electronic stopping powers based on the experimental data. Hence, this study suggests that correct electronic stopping powers are critical for quantitative MEIS analysis.

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“…Extensive experimental work on stopping of light ions on different targets at a wide range of energies has been performed over the years [21][22][23][24][25][26][27][28] (and references therein), obtaining a reasonably complete picture of the average behavior of electronic stopping power in a diversity of materials. Although there are numerous research works on stopping of ions at higher energies, there are little available data on intermediate and low energies regimes and the probing of the effects of crystalline structure of the target materials [29,30].…”

Section: Introductionmentioning

confidence: 99%

Directional dependency of electronic stopping in nickel, projectile’s excited charge state and momentum transfer

2021

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We studied the directional dependency of electronic stopping power of swift light ions in nickel using real-time time-dependent density functional theory. We report a variation of electronic stopping for moving ions as the projectile probes different electronic densities of the host material. These results show that while the predicted magnitude stays in reasonable agreement with experiment, for $$v > 2$$ v > 2 . a.u. simulating only low index crystallographic directions is not enough to sample the experimental average values. The ab initio simulations give us access to microscopic quantities, such as non-adiabatic forces, momentum transfer and transient excited state charges of the projectile and host ions, which are not available through other methods. We report these quantities for the first time.

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Stopping powers for 20–140 keV H+ and He+ on Ni, Ag and Au

Cited by 9 publications

References 16 publications

Electronic stopping power of protons and alpha particles in nickel

Electronic stopping power of protons and alpha particles in nickel

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO₂/SiO₂/Si films

Directional dependency of electronic stopping in nickel, projectile’s excited charge state and momentum transfer

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Stopping powers for 20–140 keV H+ and He+ on Ni, Ag and Au

Cited by 9 publications

References 16 publications

Electronic stopping power of protons and alpha particles in nickel

Electronic stopping power of protons and alpha particles in nickel

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO2/SiO2/Si films

Directional dependency of electronic stopping in nickel, projectile’s excited charge state and momentum transfer

Contact Info

Product

Resources

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Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO₂/SiO₂/Si films