In this study, we investigated the photosystem II photochemical efficiency (variable to maximum fluorescence ratio, F v /F m ), vegetative growth, and productivity of radish (Raphanus sativus var. hortensis) grown under different day/night temperatures (14/8°C, 19/13°C, 24/18°C, 29/23°C, and 34/28°C). Radish seed germination rates corresponding to Biologische Bundesanstalt, Bundessortenamt und Chemische Industrie (BBCH) stage 09 occurred readily at temperatures higher than 24/18°C, whereas hypocotyls elongated rapidly to cause abnormal root curving above 29/23°C. Shoots and roots grew well at 30 days after sowing (DAS). Leaves developed rapidly at temperatures above 24/18°C, reaching BBCH stage 19 at 30 DAS, during which leaf number and area increased, whereas roots showed better development at temperatures below 24/18°C, taking ~70 days for 70% of roots to attain BBCH stage 47 at 24/18°C. Root growth rates were highest at 24/18°C, with root diameters reaching ≥ 10 cm within 80 DAS at 24/18°C. At 85 DAS, high-quality roots, i.e., thick and long with no internal browning, were produced at 24/18°C. F v /F m was high at temperatures below 24/18°C, and absorption flux per cross-section (ABS/CS m ), trapped energy flux per cross section (TR o /CS m ), and electron transport per cross section (ET o /CS m ) were high at 19/13°C and 24/18°C. These findings indicate that radish plants grew well and without temperature stress at 19/13°C and 24/18°C. However, the optimal day/night temperature for producing high-quality radish roots of marketable size and weight is 24/18°C.