Activated carbons are one of promising groups of materials for reversible storage of hydrogen by physisorption. However, the heat of hydrogen adsorption in such materials is relatively low, in the range of about 4-8 kJ/mol, which limits the total amount of hydrogen adsorbed at P = 100 bar to ϳ2 wt % at room temperature and ϳ8 wt % at 77 K. To improve the sorption characteristics the adsorbing surfaces must be modified either by substitution of some atoms in the all-carbon skeleton by other elements, or by doping/intercalation with other species. In this letter we present ab initio calculations and Monte Carlo simulations showing that substitution of 5%-10% of atoms in a nanoporous carbon by boron atoms results in significant increases in the adsorption energy ͑up to 10-13.5 kJ/mol͒ and storage capacity ͑ϳ5 wt % at 298 K, 100 bar͒ with a 97% delivery rate. Hydrogen is widely considered an essential part of our energy future despite the substantial difficulties derived from its low volumetric energy density. The development of a suitable material for reversible storage of hydrogen still remains a "grand challenge," 1,2 in particular for vehicular applications.1 Although some materials are potentially attractive, even the most promising candidates, nanoporous activated carbons, [3][4][5][6] have yet to meet the U.S. Department of Energy ͑DOE͒ 2010 targets ͑0.045 kg H 2 / kg system, 28 kg H 2 / m 3 system at room temperature for light-duty vehicles 7 ͒. Recent achievement in engineering carbons nanospaces resulted in preparation of very high surface area materials ͑Ͼ3000 m 2 / g͒ performing exceedingly well at cryogenic temperature ͑ϳ0.1 kg H 2 / kg system at P = 100 bar 6,8 ͒. However, the low heat of hydrogen physisorption on carbons ͑4-8 kJ/mol͒ results in low storage capacities at room temperature ͑ϳ0.02 kg H 2 / kg system at P = 100 bar͒. 5,6 The challenge is, thus, to find ways to increase the interaction of hydrogen and a carbon substrate.Boron-doped carbons are widely conjectured to be the suitable materials for hydrogen storage. It is believed that boron doping raises the binding energy to levels that would enable room temperature storage at moderate ͑Ͻ100 bar͒ pressures. This increase in the binding energy appears to be caused by boron acting as a p-type dopant, introducing electron deficiency in the graphite layer planes, thus lowering the Fermi level and increasing the surface polarizability.9,10 It is also possible that a partial charge transfer from the occupied orbital of H 2 to the empty p z orbital of B increases the interaction energy between H 2 and boron substituted carbon surface.11,12 So far, however, neither solid computational evidence ͑i.e., from first principles, beyond Ref. 11 for B-doped fullerenes͒ nor clear experimental evidence for enhanced hydrogen storage capacities of boron-doped carbons have been presented ͑to the best of our knowledge͒. Specifically, a major question is to what extent a single boron atom, substituted in graphitic carbon surface, creates high binding energies not o...