Strahlenschäden in Halbleitern und Halbleiterbauelementen

Bäuerlein, R.

doi:10.1016/b978-0-08-013109-2.50004-6

Cited by 1 publication

(1 citation statement)

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“…On the other hand, a centre of E, -E , = 0.72 eV ( E , -E , = 0.40 eV rather) is wellknown to occur after irradiation of P-doped silicon, namely the E-centre. This centre, its microscopic configuration (V-P-complex), charge type, and annealing properties have often been described in the literature [4]. Thus it is highly probable that the inert Ne has created an intrinsic defect only.…”

Section: Resultsmentioning

confidence: 87%

Damage Profiles after 50 to 500 MeV Ion Implantation as Deduced from Thyristor Leakage Currents

Fahrner¹,

Laschinski²,

Bräuhig³

et al. 1985

phys. stat. sol. (a)

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Ne-ions of energies in the range of 50 to 500 MeV are implanted into the n-bases of thyristors. The I F ( V ) and IR( V ) leakage current characteristics of the forward and reverse blocking state are measured. The forward and reverse voltage axes are converted t o a common (n--space charge) depth axis. Either current is differentiated with respect to this axis and the local generation rates gg(z) = gR(Z) are obtained. According to the Shockley-Hall-Read theory, g(x) is an image of the local damage distribution, N T ( z ) . The measurements are repeated for various ion energies or ion doses. The variation of the measurement temperature yields an activation energy, E , = 0.72 eV. This figure is identical to the energy of the E-center (vacancy-phosphorus). Neon-Ionen mit Energien im Bereich von 50 bis 500 MeV werden in die n-Basis von Thyristoren implantiert. Die IF( V ) und IR( V)-Leckstromcharakteristiken werden in Vorwarts-und Riickwgrtsrichtung gemessen. Die DurchlaB-und Sperrspannungsachsen werden zu einer gemeinsamen (n--Raumladung) Tiefenachse konvertiert. Jeder Strom wird bezdglich dieser Achse differenziert und die lokalen Generationsraten gF(z) = gR(Z) werden erhalten. Entsprechend der Shockley-Hall-Read-Theorie liefert g ( x ) ein Bild der lokalen Damageverteilung NT(x). Die Messungen werden fur unterschiedliche Ionenenergien oder Ionendosen wiederholt. Die dnderung der MeBtemperatur ergibt eine Aktivierungsenergie von E , = 0,72 eV. Dieser Wert ist mit der Energie des E-Zentrums (Lehrstelle-Phosphor) identisch.

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Section: Resultsmentioning

confidence: 87%