Strain and Band-Gap Engineering in 
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 Alloys via 
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 Doping

Prucnal, S.; Berencén, Yonder; Wang, Mao; Grenzer, J.; Voelskow, M.; Hübner, René; Yamamoto, Yuji; Scheit, A.; Bärwolf, Florian; Zviagin, Vitaly; Schmidt‐Grund, Rüdiger; Grundmann, Marius; Żuk, J.; Turek, M.; Droździel, A.; Pyszniak, K.; Kudrawiec, R.; Polak, Maciej P.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

doi:10.1103/physrevapplied.10.064055

Cited by 18 publications

(10 citation statements)

References 47 publications

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“…Moreover, the inset in Figure 3d shows that the diffusion of Sn can be fully suppressed using ms-range solid phase epitaxy. We have observed the same effect for other elements implanted into Ge, like Al, Ga, or P [6,7,25]. It is clear that, within the island, the Ge forms a continuous layer, but voids are well visible below the surface.…”

Section: Materials 2020 13 X For Peer Review 4 Of 10supporting

confidence: 74%

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

et al. 2020

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Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

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Section: Materials 2020 13 X For Peer Review 4 Of 10supporting

confidence: 74%

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

et al. 2020

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“…The TO phonon mode of c-Ge for the annealed GeOI-1 and GeOI-2 samples is located at 300.2 and 300.4 cm –1 , respectively. The blue-shift of the TO phonon mode of c-Ge with respect to the un-implanted sample, GeOI-0, can be related to the alloy disorder and induced strain in the Ge lattice because of P incorporation. , The first weak broad peak at about 346.6 cm –1 can be assigned to the local vibrational phonon mode of P–Ge in the Ge matrix, which indicates that P dopant atoms were placed into the substitutional sites in the crystalline region of the Ge lattice . The other broad peak, centered at 386.3 cm –1 , is related to the local vibrational phonon mode of Si-Ge .…”

Section: Resultsmentioning

confidence: 97%

“…The sharp peak of the un-implanted sample (GeOI-0), located at 299.7 cm –1 , is related to the transverse/longitudinal optical (TO/LO) phonon mode of crystalline Ge (c-Ge). The optical phonon mode of c-Ge in relaxed Ge is located at 300.5 cm –1 . The as-implanted GeOI-1 and GeOI-2 samples show a broad peak centered at around 272 cm –1 in addition to the intense peak of the TO phonon mode of c-Ge, as shown in Figure a.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Echresh

Prucnal

et al. 2022

ACS Appl. Electron. Mater.

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Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation, followed by millisecond rear-side flash lamp annealing, was used to produce highly n-type-doped Ge with an electron concentration in the order of 1019–1020 cm–3. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with a symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNW contacts to reduce the Schottky barrier height. The two-probe current–voltage measurements on n-type-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.

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“…24 In fact, the covalent radius of P (107 pm) is about 11% smaller than that of Ge. 38,39 This means that the heavily P-doped Ge layer made by ion implantation should exhibit biaxial tensile strain. The biaxial tensile strain in group IV semiconductors causes the blue shift of the TO Ge-Ge phonon mode, which is also visible in Figure 5(a).…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

Prucnal

Berencén

Wang

et al. 2019

Journal of Applied Physics

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Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-generation nanoelectronics that can be fully integrated with silicon technology. To this day, the fabrication of Ge-based transistors with a n-type channel doping above 5 × 10 19 cm −3 remains challenging. Here, we report on n-type doping of Ge beyond the equilibrium solubility limit (n e ≈ 6 × 10 20 cm −3 ) together with a nanoscale technique to inspect the dopant distribution in n ++ -p junctions in GeOI. The n ++ layer in Ge is realized by P + ion implantation followed by millisecond-flashlamp annealing. The electron concentration is found to be three times higher than the equilibrium solid solubility limit of P in Ge determined at 800°C. The millisecond-flashlamp annealing process is used for the electrical activation of the implanted P dopant and to fully suppress its diffusion. The study of the P activation and distribution in implanted GeOI relies on the combination of Raman spectroscopy, conductive atomic force microscopy, and secondary ion mass spectrometry. The linear dependence between the Fano asymmetry parameter q and the active carrier concentration makes Raman spectroscopy a powerful tool to study the electrical properties of semiconductors. We also demonstrate the high electrical activation efficiency together with the formation of ohmic contacts through Ni germanidation via a single-step flashlamp annealing process.

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Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping

Cited by 18 publications

References 47 publications

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

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