Strain and electric field control of magnetic and electrical transport properties in a magnetoelastically coupled Fe3O4/BaTiO3 (001) heterostructure

Concomitant Light-Reversible Magnetic Response in Multiferroic Oxide Heterostructures for Multiphysics Applications

“…The two main magnetoelectric coupling mechanisms are strain-mediated and charge-mediated effects. ,, On the one hand, strain-mediated effects based on applying external electric fields to a piezoelectric substrate and the magnetostriction of a magnetic overlayer have been reported to modulate the magnetization of Fe 3 O 4 /BaTiO 3 heterostructures at low magnetic fields, typically by amounts of the order of 1% under electric fields of 400 kV/m. ,, We, therefore, expect the light-induced macroscopic elongation and local strain of BaTiO 3 to influence the observed variations in H C and M r through magnetoelastic coupling . However, the magnetoelastic coupling cannot account for the variations in M s , which are actually 1 order of magnitude larger (∼12%) than the changes in H C and M r / M s .…”

“…In this investigation, we embark on an exploration centered around the multiferroic Fe 3 O 4 /BaTiO 3 (100) system. Magnetite (Fe 3 O 4 ), renowned for its well-known ferromagnetism, magnetostriction, and half-metallic attributes, , is known to grow epitaxially on BaTiO 3 , a quintessential archetype of ferroelectric perovskite materials. , This harmonious fusion, based on the crystalline coherence at the interface between both materials, engenders a versatile spectrum of functionalities, spanning from electrochemical reduction and spintronics to the intricacies of multiferroicity. ,− In particular, previous studies have shown that, as a consequence of magnetoelectric coupling, the magnetic properties of Fe 3 O 4 can be indirectly affected by temperature and electric fields that change the ferroelectric order and/or strain state in BaTiO 3 . − Here, we report for the first time a completely reversible modulation of the magnetization of Fe 3 O 4 by means of low-intensity visible light illumination, a consequence of the magnetoelectric coupling with the light-induced ferroelectric domain rearrangement within BaTiO 3 .…”

Advances in the modulation engineering of ferroelectrics and multiferroics with non-chemical agents and factors: a review

“…In multiferroic heterostructures, their interrelated physical properties can be controlled through external perturbations such as electric eld, temperature, and magnetic eld. [166][167][168] By applying an electric eld, the polarization of the ferroelectric layer can be switched or manipulated, leading to changes in the overall behavior of the heterostructure. Similarly, a variation in temperature can induce phase transitions or modify the magnetic and ferroelectric properties of the materials.…”

Light-Controlled Magnetoelastic Effects in Ni/BaTiO3 Heterostructures

“…Among these materials, in RT ferroelectric lead-free BaTiO 3 (BTO)-based AMs, the interplay of electric and magnetic polarization is vastly investigated using the control of a few external parameters such as the electric field, − temperature, − and magnetic field. ,,, The mechanism behind this tuning is mainly attributed to the interfacial strain-mediated, spin exchange, orbital reconstruction, and charge-mediated coupling in AMs. ,− The effect of interfacial coupling with ferroelectrics has been addressed in Fe, , La 1– x A x MnO 3 (A = Ca and Sr), ,, Ni, , SrRuO 3 , and Fe 3 O 4 , and has revealed the feasibility to write the magnetic changes, attracting the low power MRAM device applications. These traditional tools comprise a heavy electrical circuitry and appeal for a weight reduction manipulator.…”

“…12,15,17,19 The mechanism behind this tuning is mainly attributed to the interfacial strainmediated, spin exchange, orbital reconstruction, and chargemediated coupling in AMs. 3,21−25 The effect of interfacial coupling with ferroelectrics has been addressed in Fe, 3,26 La 1−x A x MnO 3 (A = Ca and Sr), 17,27,28 Ni, 12,19 SrRuO 3 , 29 and Fe 3 O 4 15,18 and has revealed the feasibility to write the magnetic changes, attracting the low power MRAM device applications. These traditional tools comprise a heavy electrical circuitry and appeal for a weight reduction manipulator.…”