Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS<sub>2</sub>/Graphene Heterojunction Bubbles

Chen, Yujia; Wang, Yunkun; Shen, Wanfu; Wu, Minghui; Li, Bin; Qu, Zhilin; Liu, Shuai; Hu, Chunguang; Yang, Shengxue; Gao, Yunan; Jiang, Chengbao

doi:10.1021/acsnano.2c05272

Cited by 7 publications

(9 citation statements)

References 52 publications

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“…[124,125] In either test geometries, ReS 2 can exhibit piezoresistive effect due to the change in band gap profile by the applied strain. [109,124,125] Few-layer ReS 2 can exhibit a gauge factor anisotropy ratio of 80%, which is much larger than the values reported for black phosphorus. [109] Such a larger value suggests its greater potential for strain sensors.…”

Section: Optical Identification Of In-plane and Vertical Crystallogra...mentioning

confidence: 99%

“…Differential reflectance can be extended to study the optical response of ReX 2 crystals under uniaxial tensile strain applied along different crystal directions or inhomogeneous strains set in by creating bubbles. [124,125] In either test geometries, ReS 2 can exhibit piezoresistive effect due to the change in band gap profile by the applied strain. [109,124,125] Few-layer ReS 2 can exhibit a gauge factor anisotropy ratio of 80%, which is much larger than the values reported for black phosphorus.…”

Section: Optical Identification Of In-plane and Vertical Crystallogra...mentioning

confidence: 99%

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2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

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Section: Optical Identification Of In-plane and Vertical Crystallogra...mentioning

confidence: 99%

Section: Optical Identification Of In-plane and Vertical Crystallogra...mentioning

confidence: 99%

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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“…However, the fixed operating wavelength range of a device after manufacture severely limits its versatility. − While external stimuli such as the application of an electric field or strain can shift the band edges through the Franz–Keldysh effect or the Stark effect, achieving a significant reduction in the optical absorption coefficient within an extended optical absorption range typically requires the application of a high-energy bias field. − This limitation hampers the development of high-performance tunable optoelectronic devices. In recent years, experimental techniques for manipulating interfacial layers have become increasingly sophisticated, − making it feasible to control the band gap by constructing materials with different alloy compositions or combining materials with distinct band gaps. − Consequently, there is an urgent need for theoretical investigations that can predict workable heterojunction and device models and explore the underlying modulation mechanisms. , Such investigations will provide a foundation for experimentally achieving the required wavelength tunability for specific applications. , Consequently, this study focuses on two-dimensional materials with diverse band gaps and facile manipulation in heterojunction engineering. , …”

Section: Introductionmentioning

confidence: 99%

Designing and Development of AsP–GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning

Wang,

Liu,

Zhang

et al. 2023

ACS Photonics

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Recent years have witnessed rapid advancements in materials technology, leading to the anticipated development of ideal platforms for manufacturing postphotonic devices with wide range, active, and reversibly tunable operating wavelengths. Herein, we investigate the construction of arsenic phosphorus (AsP) with homotypic structures of Group IV monothiophiles (GeY (Y = Se, S)) as both vertical (for out-of-plane carrier transport through the interfacial layer) and horizontal (for in-plane carrier transport along the interfacial layer) heterojunctions. We demonstrate its excellent photonic properties by modulating the van der Waals (AsP–GeSe)V heterostructure into a type II band structure. Spectral analysis reveals a significant enhancement in the optical absorption capacity of the heterojunction compared to AsP, thereby extending the optical absorption range of AsP from the mid-infrared to the VIS region. The van der Waals and in-plane heterojunctions exhibit distinct absorption wavelengths due to the assembly of horizontal and vertical electronic states in different layers, considering further the design of AsP-based heterojunctions as a photodetector study. Photonic devices based on heterojunctions exhibit stronger polarization anisotropy, with (AsP–GeS)I heterojunctions maintaining well-controlled polarization stability independent of the photon energy. Moreover, these devices display a broadband response and high polarization sensitivity, surpassing single components. The (AsP–GeSe)V heterojunction exhibits high response and strongly sensitive polarization within wide intervals of 1137 and 2076 nm, respectively. Our findings shed light on the dual-type heterojunction engineering strategy for regulating internal structures to achieve highly efficient photonic nanodevices.

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“…As a specific case of an intercalation compound, layered materials with interlayer bubbles can store multiple types of gas molecules, which facilitate further characterization. These materials provide an excellent platform for investigating the movement of gas molecules in confined space as well as the alterations in material properties caused by strain. − Based on the bubble structure, the elastic properties and interlayer forces of layered materials could be estimated, − and the biaxial stress caused by lattice distortion can also be used to change the work function of layered materials. , Commonly, due to the high elastic modulus of layered materials, the gases inside the nanosized bubbles are considered to give rise to high pressures. ,− Several methods for producing bubbles are available. For example, the stacking of exfoliated 2D material can spontaneously generate nanoscale bubbles, but the purity of the gas species inside the bubbles is difficult to control, as the bubble structure is not inherent, and gas-filled bubbles can be totally expelled in a few hours or days .…”

mentioning

confidence: 99%

“…10−15 Based on the bubble structure, the elastic properties 16 and interlayer forces of layered materials could be estimated, 17−20 and the biaxial stress caused by lattice distortion can also be used to change the work function of layered materials. 21,22 Commonly, due to the high elastic modulus of layered materials, the gases inside the nanosized bubbles are considered to give rise to high pressures. 21,23−25 Several methods for producing bubbles are available.…”

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confidence: 99%

Trapping Hydrogen Molecules between Perfect Graphene

Tang

et al. 2023

Nano Lett.

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There is a lack of deep understanding of hydrogen intercalation into graphite due to many challenges faced during characterization of the systems. Therefore, a suitable route to trap isolated hydrogen molecules (H 2 ) between the perfect graphite lattices needs to be found. Here we realize the formation of hydrogen bubbles in graphite with controllable density, size, and layer number. We find that the molecular H 2 cannot be diffused between nor escape from the defect-free graphene lattices, and it remains stable in the pressurized bubbles up to 400 °C. The internal pressure of H 2 inside the bubbles is strongly temperature dependent, and it decreases as the temperature rises. The proton permeation rate can be estimated at a specific plasma power. The producing method of H 2 bubbles offers a useful way for storing hydrogen in layered materials, and these materials provide a prospective research platform for studying nontrivial quantum effects in confined H 2 .

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Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS₂/Graphene Heterojunction Bubbles

Cited by 7 publications

References 52 publications

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Designing and Development of AsP–GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning

Trapping Hydrogen Molecules between Perfect Graphene

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Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS2/Graphene Heterojunction Bubbles

Cited by 7 publications

References 52 publications

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Designing and Development of AsP–GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning

Trapping Hydrogen Molecules between Perfect Graphene

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Product

Resources

About

Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS₂/Graphene Heterojunction Bubbles