Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Lin, Chung-Han; Merz, Tyler A.; Doutt, Daniel R.; Joh, Jungwoo; Alamo, J.A. del; Mishra, Umesh K.; Brillson, L. J.

doi:10.1109/ted.2012.2206595

Cited by 15 publications

(8 citation statements)

References 36 publications

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“…Also, DRCLS can probe selectively at 2DEG depths versus deeper into the GaN buffer layer and beyond. Lin et al used DRCLS to measure and map the temperature distribution and defect generation inside state-of-the-art AlGaN/GaN HEMT's on a scale of tens of nanometres [118,119]. Figure 23(a) shows a scaled crosssectional schematic of a gated HEMT structure.…”

Section: Application To Transistorsmentioning

confidence: 99%

Applications of depth-resolved cathodoluminescence spectroscopy

Brillson¹

2012

J. Phys. D: Appl. Phys.

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Depth-resolved cathodoluminescence spectroscopy (DRCLS) has developed over the past few decades into a powerful technique for characterizing electronic properties of advanced materials structures and devices on a nanoscale. The lateral and depth-resolved capabilities of DRCLS enable researchers to probe native defects, impurities, chemical changes and local band structure inside state-of-the-art device structures on an unprecedented scale. A key strength of DRCLS is its ability to distinguish electronic features at buried interfaces within multilayer device structures, interfaces whose microscopic physical features can determine macroscopic electronic properties. This review provides a general overview of DRCLS and illustrates the wide array of applications now available using this technique.

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Section: Application To Transistorsmentioning

confidence: 99%

Applications of depth-resolved cathodoluminescence spectroscopy

Brillson¹

2012

J. Phys. D: Appl. Phys.

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“…However, under the illumination of a focused beam, the inhomogeneity of the device can be investigated. By raster scanning the laser beam while monitoring the short-circuit current of a PV cell, one can have a so-called laser-beam-induced current (LBIC) map [22] . One can further park the laser beam at one location to measure the light I-V characteristic.…”

Section: Microscopic I-v Measurements Under Illumination At Defect Sitesmentioning

confidence: 99%

“…Specifically, after a device is fabricated, individual defects on the device are identified. Then, the impact of individual defects is thoroughly investigated by applying different techniques as needed in a proper order, such as electroluminescence (EL), PL, micro-Raman, and micro-scale il- luminated current-voltage (I-V) measurements [22] . As the last step, the atomic-scale defect structures for the same defects are determined using HRTEM.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive,in operando, and correlative investigation of defects and their impact on device performance

Zhang¹,

Smith²

2022

J. Semicond.

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Despite the long history of research that has focused on the role of defects on device performance, the studies have not always been fruitful. A major reason is because these defect studies have typically been conducted in a parallel mode wherein the semiconductor wafer was divided into multiple pieces for separate optical and structural characterization, as well as device fabrication and evaluation. The major limitation of this approach was that either the defect being investigated by structural characterization techniques was not the same defect that was affecting the device performance or else the defect was not characterized under normal device operating conditions. In this review, we describe a more comprehensive approach to defect study, namely a series mode, using an array of spatially-resolved optical, electrical, and structural characterization techniques, all at the individual defect level but applied sequentially on a fabricated device. This novel sequential approach enables definitive answers to key questions, such as: (i) how do individual defects affect device performance? (ii) how does the impact depend on the device operation conditions? (iii) how does the impact vary from one defect to another? Implementation of this different approach is illustrated by the study of individual threading dislocation defects in GaAs solar cells. Additionally, we briefly describe a 3-D Raman thermometry method that can also be used for investigating the roles of defects in high power devices and device failure mechanisms.

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“…[22] Finally, the atomic-scale defect structure for the same defects are determined using high-resolution TEM. It has been shown previously that defects may be modified or mutate during device operation [23] or under high density photoexcitation. [5] This work investigates defects in their as-grown states by limiting the injection current and illumination light density to below the mutation thresholds, so that the native defect structure can be determined by TEM.…”

Section: Introductionmentioning

confidence: 99%

Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects

Chen

McKeon

Zhang

et al. 2020

Advanced Optical Materials

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Defects usually degrade device performance. Thus, many techniques and effort are devoted to studying semiconductor defects. However, it is rarely known: i) how individual defects affect device performance; ii) how the impact depends on the device operating conditions; iii) how the impact varies from one defect to another; and iv) how these variations are correlated to the microscopic‐scale defect structure. To address these crucial questions, an array of correlative and spatially resolved techniques, including electroluminescence, photoluminescence, Raman, I–V characteristics, and high‐resolution electron microscopy, are used to characterize dislocation defects in GaAs solar cells. Significantly, the study is carried out in a series mode and in operando. This approach provides quantitative and definitive correlation between the atomistic structure of defects and their explicit effects on device performance, thus giving unprecedented insight into defect physics.

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Cited by 15 publications

References 36 publications

Applications of depth-resolved cathodoluminescence spectroscopy

Applications of depth-resolved cathodoluminescence spectroscopy

Comprehensive,in operando, and correlative investigation of defects and their impact on device performance

Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects

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