Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction

Vianne, B.; Escoubas, S.; Richard, Marie-Ingrid; Labat, S.; Chahine, Gilbert; Schülli, Tobias U.; Farcy, A.; Bar, P.; Fiori, Vincent; Thomas, O.

doi:10.1016/j.mee.2014.12.011

Cited by 13 publications

(5 citation statements)

References 22 publications

(24 reference statements)

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“…Scanning XRD microscopy is particularly applicable to surface-structured (solid or thinfilm) crystals, for example, Si substrates with through-vias [96][97][98], semiconductor films (Si, Ge, GaN, InGaN, etc.) with surface defects [99][100][101][102], semiconductor micro-bridges [103,104], heterostructures [105], (micrometric poly-)crystals [106,107] or nano-membranes [108,109].…”

Section: Imaging Of Deformations By Scanning Xrd Microscopymentioning

confidence: 99%

X-ray Diffraction Imaging of Deformations in Thin Films and Nano-Objects

et al. 2022

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The quantification and localization of elastic strains and defects in crystals are necessary to control and predict the functioning of materials. The X-ray imaging of strains has made very impressive progress in recent years. On the one hand, progress in optical elements for focusing X-rays now makes it possible to carry out X-ray diffraction mapping with a resolution in the 50–100 nm range, while lensless imaging techniques reach a typical resolution of 5–10 nm. This continuous evolution is also a consequence of the development of new two-dimensional detectors with hybrid pixels whose dynamics, reading speed and low noise level have revolutionized measurement strategies. In addition, a new accelerator ring concept (HMBA network: hybrid multi-bend achromat lattice) is allowing a very significant increase (a factor of 100) in the brilliance and coherent flux of synchrotron radiation facilities, thanks to the reduction in the horizontal size of the source. This review is intended as a progress report in a rapidly evolving field. The next ten years should allow the emergence of three-dimensional imaging methods of strains that are fast enough to follow, in situ, the evolution of a material under stress or during a transition. Handling massive amounts of data will not be the least of the challenges.

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Section: Imaging Of Deformations By Scanning Xrd Microscopymentioning

confidence: 99%

X-ray Diffraction Imaging of Deformations in Thin Films and Nano-Objects

et al. 2022

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“…They reported that the tilt and the strain distribution mappings result from the (004) and (113) Bragg reflections. Moreover, as far as applications to the microelectronics industry are concerned, Vianne et al (2015) have investigated thermo-mechanical strain, induced by a through-silicon via process in silicon, using K-map measurements combined with finite element modelling.…”

Section: Introductionmentioning

confidence: 99%

A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon

Zhou¹,

Wang²,

Cornet³

et al. 2019

J Appl Cryst

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A synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudosubstrate is reported, within the context of the monolithic integration of photonics on silicon. Two-dimensional real-space mappings of local lattice tilt and in-plane strain from the scattering spot distributions are measured on a 200 nm partially relaxed GaP layer grown epitaxially on an Si(001) substrate, using an advanced sub-micrometre X-ray diffraction microscopy technique (K-Map). Cross-hatch-like patterns are observed in both the local tilt mappings and the in-plane strain mappings. The origin of the in-plane local strain variation is proposed to be a result of misfit dislocations, according to a comparison between in-plane strain mappings and transmission electron microscopy observations. Finally, the relationship between the in-plane strain and the free surface roughness is also discussed using a statistical method.

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“…For each (x, y) spatial position, a 3D reciprocal space map of the Si Bragg peak is obtained and the associated strain can be determined. 15,16 In situ annealing and simultaneous K-Map experiments were conducted on the same sample. For this purpose, an ultrahigh vacuum chamber with a beryllium dome was mounted on the diffractometer stage, and the sample was heated up to approximately 400 C, which corresponds to the annealing temperature of copper TSV.…”

mentioning

confidence: 99%

“…Strain values at the elements nodes ( xx , zz , and xz ) are processed to calculate the strain along the [335] crystallographic direction and are compared with the experimental strain field measured by the K-Map technique. 16 For that purpose, one must consider the absorption of the incident and exit X-ray beams diffracted by the sample. Indeed, due to the scattering geometry and the attenuation of X-rays in matter, the intensity collected on the detector depends on the (x, y) position of the beam spot relative to the sample surface (see Fig.…”

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Through-silicon via-induced strain distribution in silicon interposer

Vianne

Richard

Escoubas

et al. 2015

Applied Physics Letters

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Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along the [335] direction is found to be in the 10−5 range at room temperature and around 10−4 at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.

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Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction

Cited by 13 publications

References 22 publications

X-ray Diffraction Imaging of Deformations in Thin Films and Nano-Objects

X-ray Diffraction Imaging of Deformations in Thin Films and Nano-Objects

A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon

Through-silicon via-induced strain distribution in silicon interposer

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