Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Kim, Sun Wook; Byeon, Dae Seop; Jang, Hyunchul; Koo, Sang Man; Lee, Hoo Jeong; Ko, Dae Hong

doi:10.1063/1.4893926

Cited by 10 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For instance, the diffraction patterns can be indexed and analyzed to achieve phase and crystal orientation mapping. Also, full 2D strain maps can be extracted by accurately measuring the position of the Bragg diffracted beams from each image pixel [94][95][96][97][98][99]. However, the non-uniform contrast present in the large diffraction discs (due to variations of thickness and bending across the specimen field of view) can result in an incorrect determination of their position and deliver results that are incorrect.…”

Section: Electron Nanodiffractionmentioning

confidence: 99%

Probing local order in multiferroics by transmission electron microscopy

Campanini

Erni

Rossell

2019

Physical Sciences Reviews

View full text Add to dashboard Cite

Abstract The ongoing trend toward miniaturization has led to an increased interest in the magnetoelectric effect, which could yield entirely new device concepts, such as electric field-controlled magnetic data storage. As a result, much work is being devoted to developing new robust room temperature (RT) multiferroic materials that combine ferromagnetism and ferroelectricity. However, the development of new multiferroic devices has proved unexpectedly challenging. Thus, a better understanding of the properties of multiferroic thin films and the relation with their microstructure is required to help drive multiferroic devices toward technological application. This review covers in a concise manner advanced analytical imaging methods based on (scanning) transmission electron microscopy which can potentially be used to characterize complex multiferroic materials. It consists of a first broad introduction to the topic followed by a section describing the so-called phase-contrast methods, which can be used to map the polar and magnetic order in magnetoelectric multiferroics at different spatial length scales down to atomic resolution. Section 3 is devoted to electron nanodiffraction methods. These methods allow measuring local strains, identifying crystal defects and determining crystal structures, and thus offer important possibilities for the detailed structural characterization of multiferroics in the ultrathin regime or inserted in multilayers or superlattice architectures. Thereafter, in Section 4, methods are discussed which allow for analyzing local strain, whereas in Section 5 methods are addressed which allow for measuring local polarization effects on a length scale of individual unit cells. Here, it is shown that the ferroelectric polarization can be indirectly determined from the atomic displacements measured in atomic resolution images. Finally, a brief outlook is given on newly established methods to probe the behavior of ferroelectric and magnetic domains and nanostructures during in situ heating/electrical biasing experiments. These in situ methods are just about at the launch of becoming increasingly popular, particularly in the field of magnetoelectric multiferroics, and shall contribute significantly to understanding the relationship between the domain dynamics of multiferroics and the specific microstructure of the films providing important guidance to design new devices and to predict and mitigate failures.

show abstract

Section: Electron Nanodiffractionmentioning

confidence: 99%

Probing local order in multiferroics by transmission electron microscopy

Campanini

Erni

Rossell

2019

Physical Sciences Reviews

View full text Add to dashboard Cite

show abstract

Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafe

Kim

Lee

Jang

et al. 2019

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

Cooper

Denneulin

Bernier

et al. 2016

Micron

120

View full text Add to dashboard Cite

The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.

show abstract

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Cited by 10 publications

References 17 publications

Probing local order in multiferroics by transmission electron microscopy

Probing local order in multiferroics by transmission electron microscopy

Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafe

Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

Contact Info

Product

Resources

About