Strain compensated superlattices on <i>m</i>-plane gallium nitride by ammonia molecular beam epitaxy

Fireman, Micha N.; Bonef, Bastien; Young, Erin C.; Nookala, Nishant; Belkin, Mikhail; Speck, James S.

doi:10.1063/1.4991417

Cited by 11 publications

(3 citation statements)

References 32 publications

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“…A ThermoFisher Talos G2 200X TEM-STEMw-ChemiSTEM energy-dispersive spectroscopy (EDS) system operating at 200 kV is used to perform microstructure and chemical-element mapping. APT is also used to investigate the compositions and alloy distribution in the GaN/(Al, Ga)N heterostructures in 3D at the nanometer scale [42,43]. The needle-shaped specialized APT samples are prepared using a FEI Helios 600 dual-beam FIB instrument [44], and the analysis is performed in laserpulse mode using a Cameca 3000X HR local-electrode atom probe (LEAP).…”

Section: Methodsmentioning

confidence: 99%

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Monavarian

Khoury

et al. 2021

Phys. Rev. Applied

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We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on r-plane sapphire templates (a-GaN/r-sap) for three different quantum-well (QW) widths (3.0, 3.3, and 3.7 nm). Co-loaded structures grown on freestanding a-plane with no basal-plane stacking faults (BSFs), prismatic stacking faults (PSFs), and partial dislocations (PDs), with low threading dislocation (TD) densities of about 10 5 cm −2 are compared with those grown on a-GaN templates on (10 12) r-sapphire with BSF, PSF, PD, and TD densities of about 4 × 10 5 to 10 6 cm −2 , 5 × 10 3 to 2 × 10 4 cm −2 , about 9 × 10 10 to 2 × 10 11 cm −2 , and about 10 10 cm −2 , respectively. Fourier-transform infrared absorption spectroscopy indicates ISB transition energies in the range of about 250-300 meV (wavelength range 4.1-4.8 µm) for MQWs with different QW widths. The ISB absorption spectra indicate about 5% smaller transition energies and only about 10%-20% larger spectral linewidths for structures grown on a-GaN/r-sapphire templates compared with those on freestanding GaN substrates. The strong defect tolerance in the nonpolar a-plane ISB structures could be due to the nature of defects and their energy levels with respect to the conduction-band minima, which do not affect the ISB properties. Our results pave the way toward the production of low-cost scalable nonpolar III-nitride MQW heterostructures for a variety of passive and active optical materials and devices based on intersubband transitions.

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Section: Methodsmentioning

confidence: 99%

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Monavarian

Khoury

et al. 2021

Phys. Rev. Applied

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“…Growth of GaN/(Al,Ga)N heterostructures on various crystal orientations has been already reported by MBE [25][26][27][28][29][30] and MOCVD [31][32][33][34][35], but a systematic investigation of the impact of crystal orientation on the incorporation rate of nonradiative point defects is still lacking. A particular interest lies in the (000 1) orientation since it exhibits internal electric fields of opposite direction compared to the classical (0001) orientation, which is seen as favorable for improving the efficiency of high-frequency transistors [36], light emitting diodes [37][38][39][40] and solar cells [41].…”

Section: Introductionmentioning

confidence: 99%

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Auzelle,

Sinito,

Lähnemann

et al. 2021

Preprint

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We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN(0001) and GaN(000 1) substrates. Samples of different polarity are found to be on par in terms of their morphological and structural perfection and exhibit essentially identical quantum well widths and Al content. Regardless of the crystal orientation, the exciton decay in the MQWs at 10 K is dominantly radiative and the photoluminescence (PL) energy follows the quantum confined Stark effect (QCSE) for different quantum well widths. A prominent free-to-bound transition involving interface shallow donors is, however, visible for the N-polar MQWs. At room-temperature, in contrast, the exciton decay in all samples is dominated by nonradiative recombination taking place at point defects, presumably Ca or V 𝑁 located at the bottom QW interface. Remarkably, the N-polar MQWs exhibit a higher PL intensity and longer decay times than the Gapolar MQWs at room-temperature. This improved internal quantum efficiency is attributed to the beneficial orientation of the internal electric field that effectively reduces the capture rate of minority carriers by interface trap states.

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“…The use of quaternary compounds is particularly interesting because it allows us to independently control the strain and the composition of each strained layer. Moreover, the InGaAsP material system does not suffer of the typical growth issues of III-nitride compounds so that all the compressive and tensile layers can be grown at their optimum temperature without the need of long waiting time for temperature ramp up and cool down, as is the case in the InGaN/AlGaN system [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

et al. 2018

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We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2) stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (AFM); transmission electron microscopy (TEM); and electron channeling contrast imaging (ECCI); which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer.

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Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy

Cited by 11 publications

References 32 publications

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

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