Strain-dependent magnetism and anomalous Hall effect in noncollinear antiferromagnetic Mn3Pt films

Zhao, Zhongping; Zhang, Kewei; Guo, Qi; Jiang, Yong

doi:10.1016/j.physe.2022.115141

Cited by 9 publications

(4 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In reference [81], the authors systematically studied the effect of deformation on the magnetic properties and the anomalous Hall effect of fcc noncollinear antiferromagnetic Mn 3 Pt films. They found that the ferromagnetic characteristics of Mn 3 Pt films showed a similar response to strain, in contrast to hexagonal chiral antiferromagnets.…”

Section: Features Of the Electronic Transport And Magnetic State Of M...mentioning

confidence: 99%

“…Table 1 presents information on Mn 2 YZ and Mn 3 Z (Y = Cr, Fe, Co; Z = Al, Ge, Si, Sn, Pt), for which the electronic state, magnetic state, and anomalous Hall conductivity are given. Mn 2 VSi HMF [41] FIM [41] Mn 2 CrAl HMF [90,91] CFIM 3 [21] Mn 2 FeAl HMF [36] CFIM [42] Frustrated AFM 4 [44] Mn 2 NiAl AFM [92] Mn 2 CoAl SGS 5 [46] FM 6 [46] 21.8 [46] Mn 3 Al HM-AFM 7 [93] CFIM (cast); frustrated AFM (RMQ) 8 [28,29] AFM [93] 320 [61] Mn 3 Ge HM-FIM 9 [93] TSM 10 [9] FIM [93] Noncollinear AFM [9,62] 60 at RT; ~380 at 5 K [62] Mn 3 Si HM-FIM [93] FIM [93] Mn 3 Sn TSM [78] Noncollinear AFM [77,80] kagome AFM [78] ~20 at RT; ~100 at 100 K [94] Mn 3 Pt TSM [81] kagome AFM [81] 100 [81] Mn 3 Ir AFM [95] 40 at RT [95] 1 HMF is a half metallic ferromagnet. 2 FIM is a ferrimagnet.…”

Section: Physical Mechanisms Of the Magnetic States Formation In Mn-b...mentioning

confidence: 99%

See 1 more Smart Citation

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Marchenkov,

Irkhin

2023

Materials

View full text Add to dashboard Cite

We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn2YZ and Mn3Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn2YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds of Mn3Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn2YAl and Mn3Z compounds can be used for applications in micro- and nanoelectronics and spintronics.

show abstract

Section: Features Of the Electronic Transport And Magnetic State Of M...mentioning

confidence: 99%

Section: Physical Mechanisms Of the Magnetic States Formation In Mn-b...mentioning

confidence: 99%

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Marchenkov,

Irkhin

2023

Materials

View full text Add to dashboard Cite

show abstract

“…The intrinsic property is independent of disorder details and depends solely on the topology of the electronic band structure [24][25][26]. In fact, a large number of ferromagnetic [27][28][29][30] and antiferromagnetic materials [31][32][33] show large intrinsic anomalous Hall conductivity (AHC) and such anomalous behavior is contributed due to the emergence of large BC in momentum space [27,28,34,35]. However, the large AHC materials like Heusler ferromagnets Co 2 MnGa [29,36] and Co 2 MnAl [30] have the conductivities order of 10 3 S/cm and are of intrinsic origin.…”

Section: Introductionmentioning

confidence: 99%

Hydrostatic pressure-induced anomalous hall effect in Co₂FeSi semimetal

Sau,

Sa,

Kumar

2024

Electron. Struct.

View full text Add to dashboard Cite

The Weyl points and nodal line emerge in the momentum space due to symmetry protected state in topological semimetal(TSM) materials and these materials hold significance due to their unusual anomalous transport properties. In this manuscript, we study the topological properties of the electronic band structure of a half-metallic ferromagnet Co$_{2}$FeSi employing the ab-initio DFT method and show that it is a strongly correlated material. The experimentally observed magnetic properties can be explained in terms of the Slater-Pauling (SP) rule and our calculations are consistent with it. We also investigate the band topology of Co$_{2}$FeSi and find that there are three topological nodal lines at 380 meV above Fermi Energy (\textit{E$_F$}). The degeneracy of these nodal lines is perturbed upon introducing spin-orbit coupling with magnetization along [001] direction. However, some points still preserve degeneracy and are identified as Weyl points, each associated with a specific Chern number. At the ambient pressure, the AHC properties of this material have only extrinsic contribution which is consistent with the experimental results. To make the AHC intrinsic, we tune the position of the nodal line close to the Fermi energy by applying the hydrostatic pressure up to 26 GPa. We also discuss crystal symmetries and their relation with nodal lines and Weyl points.

show abstract

“…Chiral antiferromagnets have non-collinear spin configurations due to the geometrical frustration. [1][2][3][4][5] Despite their negligibly small net magnetization, they exhibit a large anomalous Hall effect (AHE) [6][7][8][9][10][11][12][13][14][15][16][17][18] due to their non-vanishing Berry curvature arising from the topological spin structure. 19,20) Therefore, chiral antiferromagnets have been standing out as a new spintronic material, especially in the context of antiferromagnetic spintronics.…”

Section: Introductionmentioning

confidence: 99%

Extrinsic contribution to anomalous Hall effect in chiral antiferromagnetic (111)-oriented L1₂-Mn₃Ir films

Kobayashi¹,

Kimata²,

Kan³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Chiral antiferromagnets are regarded as a new class of antiferromagnets owing to its intriguing spin transport properties such as a sizable anomalous Hall effect. In this work, we fabricated chiral antiferromagnetic L12-Mn3Ir (111)-oriented films and investigated the anomalous Hall conductivity with respect to the chemical order parameter S. It is found that the anomalous Hall conductivity in (111)-oriented films is much more pronounced compared to (001)-oriented films, which is consistent with the theoretical prediction. We also found that the anomalous Hall conductivity strongly depends on the longitudinal conductivity, which could suggest an extrinsic contribution to the anomalous Hall effect in L12-Mn3Ir.

show abstract

Strain-dependent magnetism and anomalous Hall effect in noncollinear antiferromagnetic Mn3Pt films

Cited by 9 publications

References 26 publications

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Hydrostatic pressure-induced anomalous hall effect in Co₂FeSi semimetal

Extrinsic contribution to anomalous Hall effect in chiral antiferromagnetic (111)-oriented L1₂-Mn₃Ir films

Contact Info

Product

Resources

About

Strain-dependent magnetism and anomalous Hall effect in noncollinear antiferromagnetic Mn3Pt films

Cited by 9 publications

References 26 publications

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Hydrostatic pressure-induced anomalous hall effect in Co2FeSi semimetal

Extrinsic contribution to anomalous Hall effect in chiral antiferromagnetic (111)-oriented L12-Mn3Ir films

Contact Info

Product

Resources

About

Hydrostatic pressure-induced anomalous hall effect in Co₂FeSi semimetal

Extrinsic contribution to anomalous Hall effect in chiral antiferromagnetic (111)-oriented L1₂-Mn₃Ir films