Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

Hecker, M.; Roelke, Marek; Hermann, Péter; Zschech, Ehrenfried; Vartanian, Victor

doi:10.1088/1742-6596/209/1/012008

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…Germanium has also been investigated, often in conjunction with Si [93][94][95]. An interesting result showed asymmetric broadening of bands was observed that corresponded to decreases in the nanowire diameter [96].…”

Section: Applications Of Tersmentioning

confidence: 99%

Tip enhanced Raman scattering: plasmonic enhancements for nanoscale chemical analysis

2014

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Tip enhanced Raman scattering (TERS) is an emerging technique that uses a metalized scanning probe microscope tip to spatially localize electric fields that enhances Raman scattering enabling chemical imaging on nanometer dimensions. Arising from the same principles as surface enhanced Raman scattering (SERS), TERS offers unique advantages associated with controling the size, shape, and location of the enhancing nanostructure. In this article we discuss the correlations between current understanding of SERS and how this relates to TERS, as well as how TERS provides new understanding and insights. The relationship between plasmon resonances and Raman enhancements is emphasized as the key to obtaining optimal TERS results. Applications of TERS, including chemical analysis of carbon nanotubes, organic molecules, inorganic crystals, nucleic acids, proteins, cells and organisms, are used to illustrate the information that can be gained. Under ideal conditions TERS is capable of single molecule sensitivity and sub-nanometer spatial resolution. The ability to control plasmonic enhancements for chemical analysis suggests new experiments and opportunities to understand molecular composition and interactions on the nanoscale.

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Section: Applications Of Tersmentioning

confidence: 99%

Tip enhanced Raman scattering: plasmonic enhancements for nanoscale chemical analysis

2014

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“…In 2007, micro-Raman spectroscopy was applied to characterize the stress in patterned long Fins [14]. Subsequently, micro-Raman spectroscopy was widely used to study the stress in micrometer-sized structures [15][16][17][18][19]. With the semiconductor device approaching nanometer size, it is reported that there was no stress in vertically grown SiNWs [20,21].…”

Section: Introductionmentioning

confidence: 99%

A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

Huang¹,

Liu²,

Yang³

et al. 2022

NSO

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Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exceeding the device. In this work, a non-destructive stress characterization methodology of confocal Raman spectroscopy was proposed and performed for GAANS device fabrication. Channel stress evolution along the fabrication process was successfully characterized by designing high-density NS array and analyzing the linear scanned spectra in different structures. The related mechanism of stress evolution was systematically studied by Sentaurus process simulation. Additionally, applying this methodology on detecting the bending of suspended NS after channel release process was demonstrated. Therefore, this work might provide a promising solution to realize in-line characterization of channel stress in GAA NS transistors and process monitor of NS channel integrity.

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Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter

Kumari

Gupta

2021

IEEE Trans. Device Mater. Relib.

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Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

Cited by 4 publications

References 19 publications

Tip enhanced Raman scattering: plasmonic enhancements for nanoscale chemical analysis

Tip enhanced Raman scattering: plasmonic enhancements for nanoscale chemical analysis

A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter

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