2011
DOI: 10.1063/1.3544939
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Strain distribution in bent ZnO microwires

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Cited by 47 publications
(84 citation statements)
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“…While the near-band edge luminescence shifts about 2.5 meV from the tensile (bottom) to the compressive (top) part of the microwire (in Ref. [34], the deformation potential was determined to be @E=@e c ¼ ðÀ2:04 AE 0:02Þ eV), the energy position of the recorded WGM remains the same for all positions, corroborating that the WGM is an integral and not a local property of the cavity. In Ref.…”
Section: Bent Hexagonsmentioning
confidence: 70%
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“…While the near-band edge luminescence shifts about 2.5 meV from the tensile (bottom) to the compressive (top) part of the microwire (in Ref. [34], the deformation potential was determined to be @E=@e c ¼ ðÀ2:04 AE 0:02Þ eV), the energy position of the recorded WGM remains the same for all positions, corroborating that the WGM is an integral and not a local property of the cavity. In Ref.…”
Section: Bent Hexagonsmentioning
confidence: 70%
“…In Ref. [34], WGM have been also been observed for larger strain of e ¼ 3:4 Â 10 À3 . How the character of WGM possibly changes from 6-WGM to 3-WGM upon bending is subject to future work.…”
Section: Bent Hexagonsmentioning
confidence: 88%
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“…Thus, the determination of the deformation potentials and the emission characteristics of strained microand nanowires have been investigated. [6][7][8][9][10][11][12][13] For small applied strain values (jj < 1:5%), a linear shift of the exciton energy as a function of the applied strain was observed. However, the reported slope of this energy shift differs strongly in the literature.…”
mentioning
confidence: 99%