Strain-driven growth of ultra-long two-dimensional nano-channels

Zhu, Chao; Yu, Maolin; Zhou, Jiadong; He, Yongmin; Zeng, Qingsheng; Deng, Ya; Guo, Shasha; Xu, Mingquan; Shi, Jinan; Zhou, Wu; Sun, Litao; Wang, Lin; Hu, Zhili; Zhang, Zhuhua; Guo, Wanlin; Liu, Zheng

doi:10.1038/s41467-020-14521-8

Cited by 40 publications

(49 citation statements)

References 40 publications

(44 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, defects like boundaries, exposed edges or dislocations in the TMDCs have been found to act as a low energy nucleation sites, [137][138][139][140] and based on this, Li et al…”

Section: Cvd Growthmentioning

confidence: 99%

Structure, Preparation, and Applications of 2D Material‐Based Metal–Semiconductor Heterostructures

Tan

Liu

et al. 2020

Small Structures

View full text Add to dashboard Cite

Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. In this review, MSHSs with different structures and dimensionalities are first introduced, followed by several ways to prepare them. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, we give our perspectives about the challenges and future research directions in this emerging field.

show abstract

“…Recently, defects like boundaries, exposed edges or dislocations in the TMDCs have been found to act as a low energy nucleation sites, [137][138][139][140] and based on this, Li et al…”

Section: Cvd Growthmentioning

confidence: 99%

Structure, Preparation, and Applications of 2D Material‐Based Metal–Semiconductor Heterostructures

Tan

Liu

et al. 2020

Small Structures

View full text Add to dashboard Cite

show abstract

“…As a result, the shorttime reaction generates hybrid MoS2 channels within the MoSe2 matrix that strictly follow the GB shapes. Our early work has verified that this substitution can well preserve the morphology of GBs in 2D MoSe2 24 . S and Se atoms show distinct brightness in the STEM images according to their sizes.…”

Section: Resultsmentioning

confidence: 61%

“…2a. Instead of only one type of dislocation core for building the GB, we here identify two types of cores as two basic elements from our experiments-the 4|8 and 4|4|8 dislocation cores 11,12,24,29 , which can be mixed to fill the interstice between the two domains.…”

Section: Resultsmentioning

confidence: 99%

“…The rich mechanochemical coupling at dislocations in 2D MX2 would cause distinct behaviors for the corresponding GBs. Indeed, experimentally observed GBs in 2D MX2 often exhibit a fine-polyline topology with a sequence of alternately folded segments 11,14,24 . Despite extensive study of GBs in the flatland, the polyline GBs (p-GBs) are yet to be understood, hampered by the fact that the characteristic size spans several orders of magnitude, from grains, via GB segments, to atoms.…”

mentioning

confidence: 99%

“…GBs in MX2 are unique for their extension into a third dimension, forming series-connected, dreidel-shaped polyhedra 12 . They likewise present a fertile ground for exploring new phenomena [20][21][22][23][24] through the fascinating interplay they afford between local chemistry and far-field mechanics.…”

mentioning

confidence: 99%

See 2 more Smart Citations

‘Colorful’ Polyline Grain Boundaries in Two-dimensional Transition Metal Dichalcogenides

Zhu

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

Grain boundaries (GBs) are vital to crystal materials and their applications. Although the GBs in bulk and two-dimensional materials have been extensively studied, the polyline GBs prevalently forming in transition metal dichalcogenide monolayers by a sequence of folded segments remain a mystery. We visualize the large-area distribution of the polyline GBs in MoSe2 monolayers by means of a strain mapping method and unravel their structural origin using ab initio calculations combined with high-resolution atomic characterizations. Unlike normal GBs in two-dimensional materials with one type of dislocation cores, the polyline GBs consist of two basic elements—4|8 and 4|4|8 cores, whose alloying results in structural diversity and distinctly high stability due to relieved stress fields nearby. The defective polygons can uniquely migrate along the polyline GBs via the movement of single molybdenum atoms, unobtrusively giving the GBs their chameleon-like ‘colorful’ appearances. Furthermore, the polyline GBs can achieve useful functionalities such as intrinsic magnetism and highly active electrocatalysis.

show abstract

Mechanical, Elastic, and Adhesive Properties of Two‐Dimensional Materials: From Straining Techniques to State‐of‐the‐Art Local Probe Measurements

Giorgio

Blundo

Pettinari

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

While static methods are often essential to make a material suited to a specific application, by permanently altering its properties, dynamic ones potentially enable their real-time modulation, paving the way for the development of reconfigurable devices.Within this context, strain engineering has historically been regarded as a "static" tuning method, which exploited the crystal deformations induced by the juxtaposition of materials with different lattice constants to manipulate the properties of semiconductor heterostructures [1] and improve the performance of electronic devices (e.g., CMOS-based logic technologies [2] ). In recent years, however, strain-engineering paradigms have begun to shift, leading to the development of new devices, capable of generating a dynamic modulation of the mechanical deformations induced in the active materials (and, thus, of their optoelectronic properties).Micro-and nano-electromechanical systems (MEMS and NEMS), for example, have long been used for sensing applications, thanks to their ability to transduce external stresses (e.g., applied pressure/weights, molecule adsorption,...) into electrical signals. In the opposite regime they are, at least in principle, 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs), are intrinsically flexible, can withstand very large strains (>10% lattice deformations), and their optoelectronic properties display a clear and distinctive response to an applied stress. As such, they are uniquely positioned both for the investigation of the effects of mechanical deformations on solid-state systems and for the exploitation of these effects in innovative devices. For example, 2D materials can be easily employed to transduce nanometric mechanical deformations into, e.g., clearly detectable electrical signals, thus enabling the fabrication of high-performance sensors; just as easily, however, external stresses can be used as a "knob" to dynamically control the properties of 2D materials, thereby leading to the realization of strain-tuneable, fully reconfigurable devices. Here, the main methods are reviewed to induce and characterize, at the nm level, mechanical deformations in 2D materials. After presenting the latest results concerning the mechanical, elastic, and adhesive properties of these unique systems, one of their most promising applications is briefly discussed: the realization of nano-electromechanical systems based on vibrating 2D membranes, potentially capable of operating at high frequencies (>100 MHz) and over a large dynamic range.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admi.202102220.

show abstract

Strain-driven growth of ultra-long two-dimensional nano-channels

Cited by 40 publications

References 40 publications

Structure, Preparation, and Applications of 2D Material‐Based Metal–Semiconductor Heterostructures

Structure, Preparation, and Applications of 2D Material‐Based Metal–Semiconductor Heterostructures

‘Colorful’ Polyline Grain Boundaries in Two-dimensional Transition Metal Dichalcogenides

Mechanical, Elastic, and Adhesive Properties of Two‐Dimensional Materials: From Straining Techniques to State‐of‐the‐Art Local Probe Measurements

Contact Info

Product

Resources

About