2015
DOI: 10.1002/smll.201503044
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Strain Driven Spectral Broadening of Pb Ion Exchanged CdS Nanowires

Abstract: Broad visible photodetectors based on individual Pb ion exchanged CdS nanowires are reported. They are prepared via an ion exchange reaction initiated on the surface of CdS nanowires with a further diffusion of ionic reactants. The broadening of the response spectrum is relative to electronic band structure transition caused by the tensile strain in the lattice.

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Cited by 61 publications
(31 citation statements)
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“…By fitting the photocurrent ( I ph ) to a power function of the white‐light intensity ( P ) according to equation, I ph ∝ P C , C = 0.93, 0.87, 0.75, and 0.41 were obtained for MAPbI 3– x Cl x NFs with x = 0, 0.33, 0.54, and 0.75, respectively. Note that photocurrent should be directly proportional to intensity of the incident light, the sublinear relations are mainly attributed to the complicated processes within semiconductor, including electron–hole generation, trapping, and recombination . In the present case, MAPbI 3 NF exhibits the power dependence of C = 0.93, indicating the trap states are very scarce induced photocurrent linearly proportional to the light intensity .…”
Section: Resultsmentioning
confidence: 60%
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“…By fitting the photocurrent ( I ph ) to a power function of the white‐light intensity ( P ) according to equation, I ph ∝ P C , C = 0.93, 0.87, 0.75, and 0.41 were obtained for MAPbI 3– x Cl x NFs with x = 0, 0.33, 0.54, and 0.75, respectively. Note that photocurrent should be directly proportional to intensity of the incident light, the sublinear relations are mainly attributed to the complicated processes within semiconductor, including electron–hole generation, trapping, and recombination . In the present case, MAPbI 3 NF exhibits the power dependence of C = 0.93, indicating the trap states are very scarce induced photocurrent linearly proportional to the light intensity .…”
Section: Resultsmentioning
confidence: 60%
“…Note that photocurrent should be directly proportional to intensity of the incident light, the sublinear relations are mainly attributed to the complicated processes within semiconductor, including electron–hole generation, trapping, and recombination . In the present case, MAPbI 3 NF exhibits the power dependence of C = 0.93, indicating the trap states are very scarce induced photocurrent linearly proportional to the light intensity . It is widely accepted that free electrons and holes comprise the excited state of MAPbI 3 under photoexcitation.…”
Section: Resultsmentioning
confidence: 61%
See 1 more Smart Citation
“…The relationship between the illumination intensity and illumination power density is shown in Table S1 in the Supporting Information. The responsivities of the CdS photodetector are shown in Figure a, and the comparison diagram of the responsivities in this work and other reported photodetectors such as CdS, ZnO, and CdSe based photodetectors for various wavelength are shown in Figure b …”
Section: Resultsmentioning
confidence: 63%
“…Apparently, bare ZnO nanowires reveal strong absorption under the wavelength below 380 nm while the absorption onset value for CH 3 NH 3 PbI 3 is located at 760 nm, consistent with its near band edge emission. After wrapping CH 3 NH 3 PbI 3 , the hybrid structures may offer a wider absorption range up to 760 nm, hence, highly desirable for the broadband photodetectors across the UV–visible range . Accordingly, the light sensor established on individual CH 3 NH 3 PbI 3 /ZnO hybrid structures is schematically illustrated in Figure b and the SEM image of the whole device is depicted in inset of Figure c.…”
Section: Resultsmentioning
confidence: 99%