light absorption, [3] as well as the unique optoelectronic properties. [4][5][6][7] Therefore, many researchers are devoted to synthesize various of 1D nanostructures with controllable size, morphology, orientation, and crystallinity. Until now, various 1D nonostructures including nanorods (NRs), nanowires, nanotubes, and nanobelts [4,5,8,9] have been synthesized by many approaches such as chemical vapor deposition (CVD), focused ion beam, vapor-liquid-solid and chemical solutions. [10][11][12][13] Among 1D nanomaterials, 1D nanostructured semiconductor exhibited extensive application in light-emitting diode, transistors, lasers, solar cells, panel displays, field emitters, and photodetector devices. [4,12,14,15] As one of the most important optoelectronic devices, photodetectors can be used to convert the optical signal into electrical signal. Generally, the photodetectors based on 1D nanostructures show high sensitivity, large photocurrent gain, good reliability, and fast response time. [11,16,17] As we know, various 1D semiconductor nanomaterials have been used to fabricate photodetectors such as CdS, ZnO, ZnS, SnO 2 , WS 2 , CdTe, ZnTe, and In 2 Te 3 . [4,[18][19][20][21][22] It has been concluded that the photoresponse properties of these fabricated detectors are determined critically by a variety of parameters including selected materials, contact type of device, as well as the crystalline quality and dimension.As a significant II-VI chalcogenide semiconductor, wurtzite CdS is a direct bandgap semiconductor with the band energy of 2.42 eV at room temperature. [23] The particular characteristics of CdS such as excellent photoconductivity, good chemical stability, low work function (4.2 eV), and the working in visible spectrum, [24] make CdS become a promising candidate in photodetectors. [25] In recent years, many efforts have been used to improve the performance of the CdS photodetector with the novel type of device structure such as side-gated field-effect transistor. [26,27] While, in the area of the traditional Ohmic contact based photodetectors, many efforts still have been dedicated to improve the quantum efficiency, photoresponse ratio, sensitivity, and response time of 1D CdS nanowires photodetectors. [28][29][30] However, less attention has been paid to improve the responsivity of CdS nanwires photodetector despite it is the important parameter to evaluate the device performance such as the ability of the photoelectric conversion.1D nanoscale photodetectors have been extensively investigated for the unique geometry structure and novel physical and chemical properties. The 1D CdS materials have received much attention in the field due to its high photosensitivity and fast response, while how to achieve high responsivity is still in development, despite it is the crucial target to the excellent photo detector. Single crystal CdS nanorods (NRs) are synthesized on SiO 2 /Si substrate over large scale via the chemical vapor deposition method. The individual single CdS nanorod photodetector have been fabr...