Strain-engineered growth of two-dimensional materials

Ahn, Geun Ho; Amani, Matin; Rasool, Haider I.; Lien, Der Hsien; Mastandrea, James P.; Ager, Joel W.; Dubey, Madan; Chrzan, D. C.; Minor, Andrew M.; Javey, Ali

doi:10.1038/s41467-017-00516-5

Cited by 305 publications

(280 citation statements)

References 38 publications

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“…4(c). The parameter ∆, describing the orbital gap at K and K' valley, decreases as we increase the lattice constant in agreement with literature [48,54,[75][76][77][78]. Keeping the orbital decomposed band structure ( Fig.…”

Section: Geometry Band Structure and Fitted Resultssupporting

confidence: 89%

Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides

2019

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When considering transition-metal dichalcogenides (TMDCs) in van der Waals (vdW) heterostructures for periodic ab-initio calculations, usually, lattice mismatch is present, and the TMDC needs to be strained. In this study we provide a systematic assessment of biaxial strain effects on the orbital, spin-orbit, and optical properties of the monolayer TMDCs using ab-initio calculations. We complement our analysis with a minimal tight-binding Hamiltonian that captures the low-energy bands of the TMDCs around K and K' valleys. We find characteristic trends of the orbital and spinorbit parameters as a function of the biaxial strain. Specifically, the orbital gap decreases linearly, while the valence (conduction) band spin splitting increases (decreases) nonlinearly in magnitude when the lattice constant increases. Furthermore, employing the Bethe-Salpeter equation and the extracted parameters, we show the evolution of several exciton peaks, with biaxial strain, on different dielectric surroundings, which are particularly useful for interpreting experiments studying strain-tunable optical spectra of TMDCs.

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Section: Geometry Band Structure and Fitted Resultssupporting

confidence: 89%

Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides

2019

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“…The following are Raman and photoluminescence (PL) spectra characterization under 532nm excitation. The exfoliated WSe2 clearly presents two Raman peaks in the range of 250 and 260 cm -1 (Figure 3c), which correspond to the in-plane Raman and AFM data, this change can be caused by the interaction between the sample and different substrates [39].…”

Section: Characterization and Device Performancementioning

confidence: 59%

Movable-Type Transfer and Stacking of van der Waals Heterostructures for Spintronics

et al. 2020

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The key to achieving high-quality van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the control over clean and flexible interfaces. However, existing transfer methods based on different mediators possess insufficiencies including the presence of residues, the unavailability of flexi ble interface engineering, and the selectivity towards materials and substrates since their adhesions differ considerably with the various preparation conditions, from chemical vapor deposition (CVD) growth to mechanical exfoliation. In this paper, we intr oduce a more universal method using a prefabricated polyvinyl alcohol (PVA) film to transfer and stack 2D materials, whether they are prepared by CVD or exfoliation. This peel-off and drop-off technique promises an ideal interface of the materials without introducing contamination. In addition, the method exhibits a micron-scale spatial transfer accuracy and meets special experimental conditions such as the preparation of twisted graphene and the 2D/metal heterostructure construction. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted transfer process will promote the development of high-performance 2D-material-based devices.

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“…The heterostructures of 2D materials with graphene also induce the change of graphene's shape and the configuration of the heterostructures, giving rise to novel electronic and photoelectric properties 2,33,34. More importantly, the electronic and optical performances of 2D semiconductors can be further tuned by strain engineering for device applications 35,36…”

Section: Introductionmentioning

confidence: 99%

Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure

Zeng

Chen

Ge³

2020

Adv Elect Materials

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Heterostructure of various 2D semiconductors have attracted extensive attention due to their tunable electronic properties and tremendous application potential. Using first‐principles calculations, the electronic properties of a GeP/graphene van der Waals heterostructure are studied and the physical mechanism of its properties modulated by strain and electric field are examined. The calculations reveal that not only the electronic properties of the GeP/Graphene heterostructure, but also the position of the graphene's Dirac cone, can be modulated by uniaxial strain. Interestingly, uniaxial strain can induce p‐type to n‐type Schottky contact transition and its band alignment allows photocatalytic water splitting. The band edges of the GeP relative to that of graphene are effectively modulated by transverse electric field. These findings provide comprehensive understanding of fundamental properties of the GeP/graphene heterostructure and its tunable electronic properties through strain engineering and electric fields, which will be helpful to the application of 2D GeP‐based nanodevices.

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Strain-engineered growth of two-dimensional materials

Cited by 305 publications

References 38 publications

Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides

Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides

Movable-Type Transfer and Stacking of van der Waals Heterostructures for Spintronics

Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure

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