Strain Engineering in Halide Perovskites

Moloney, Erin G.; Yeddu, Vishal; Saidaminov, Makhsud I.

doi:10.1021/acsmaterialslett.0c00308

Cited by 114 publications

(101 citation statements)

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“…A similar result on the strain-induced reduction of the band gap in other metal halide perovskites has been reported in previous literature reports. 33,34 In order to better understand this issue, the as-grown CsPbI 3 NPs was transferred from the GaN substrate onto the SiO 2 /Si substrate. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction

et al. 2022

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“…Another issue is that MAPbI3 undergoes a crystal structure phase transition from tetragonal to cubic phase at ~60 o C. 86 Solar cells reach this temperature under MPP operation. As a result, MAPbI3 single-crystal-based devices experience loss of efficiency over long period of testing due to delamination induced by polymorphism-assisted volumetric change 87 . Therefore, compositional engineering is required to improve the stability of SC-PSCs.…”

Section: Figure 4: (A)mentioning

confidence: 99%

Perovskite Single-Crystal Solar Cells: Going Forward

et al. 2021

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Most efficient perovskite solar cells are based on polycrystalline thin films; however, substantial structural disorder and defective grain boundaries place a limit on their performance. Perovskite single crystals are free of grain boundaries, leading to significantly low defect densities and thus hold promise for high-efficiency photovoltaics. However, the surfaces of perovskite single crystals present a major performance bottleneck because they possess a higher density of traps than the bulk. Hence, it is crucial to understand and control the surface trap population to fully exploit perovskite single crystals. This perspective highlights the importance of surface-trap management in unleashing the potential of perovskite single-crystal photovoltaics and discusses strategies to take this technology beyond the proof-of-concept stage.

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“…And strain engineering could be one of the most effective methods to engineering the materials’ properties. For perovskite materials, because of the strong coupling effect between strain and different lattice distortions, strain engineering [ 87 ] can effectively control many different physical characteristics, such as ferroelectricity, multiferroic property, metal‐insulator phase transition, and photoelectric property (Figure 8c). The coupling between strain and lattice distortion not only contains many basic scientific problems, but also has valuable applications in the design and preparation of materials.…”

Section: Physical Properties and Strain Engineering Of 2d Semiconductorsmentioning

confidence: 99%

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

Gong

et al. 2022

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properties and are proved to be potential in the fields of optoelectronics, photonics, biosensing as well as energy conversion and storage. Although centimeter-scale graphene single crystal has been obtained, it is not suitable for electronic switches in traditional transistors due to its semimetallic nature and large dark-current. Even many technologies have been proposed to create the energy bandgap in graphene, the value is remaining too small to realize practical applications. [2] Therefore, scientists are gradually changing the direction of research focusing on 2D materials beyond graphene, such as transition metal dichalcogenides (TMDs), graphitic carbon nitride, MXenes, hexagonal boron nitride (h-BN), hexagonal metal oxide (h-MO), and transition metal oxides (TMOs). As expected, 2D materials can provide a completely suspended surface without dangling bonds, so that the corresponding devices can minimize the influence of various surface states (Figure 1). [3] Benefitting from these excellent features, the 2D transistor can obtain a very low subthreshold swing (SS≈70 mV decade −1 ), which is comparable to the most advanced silicon (Si) transistor. [4] Due to excellent mechanical flexibility and compatibility with low-temperature manufacturing processes, 2D materials are expected to be used in flexible electronic products with plastic substrates. [5][6][7] The use of 2D materials in flexible electronic products can overcome several technical challenges in systems based on traditional materials, such as low mobility (typically below 10 cm 2 v −1 s −1 ), high driving voltage of organic materials, [8,9] complex technological processes, and large leakage current of polycrystalline Si. [10,11] Beyond their excellent electrical properties, 2D materials also exhibit a high degree of flexibility and transparency. Strong covalent bonds in the plane (Figure 1) make the 2D material mechanically robust, resulting in high fracture strains. [12][13][14] Mechanical robustness makes 2D materials suitable for flexible electronic products (Figure 2 reveals the roadmap of 2D materials used in flexible devices) that are subject to mechanical strain and cyclic stress. In addition, their atomic thickness makes them also suitable for transparent electronic products due to their high transparency in the visible range.In this paper, we first introduce the properties and preparation methods of 2D materials beyond graphene. Then, the applications of 2D materials in flexible devices are reviewed.2D materials are now at the forefront of state-of-the-art nanotechnologies due to their fascinating properties and unique structures. As expected, low-cost, high-volume, and high-quality 2D materials play an important role in the applications of flexible devices. Although considerable progress has been achieved in the integration of a series of novel 2D materials beyond graphene into flexible devices, a lot remains to be known. At this stage of their development, the key issues concern how to make further improvements to highperformance and scal...

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Strain Engineering in Halide Perovskites

Cited by 114 publications

References 100 publications

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction

Perovskite Single-Crystal Solar Cells: Going Forward

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

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Strain Engineering in Halide Perovskites

Cited by 114 publications

References 100 publications

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI3/GaN heterojunction

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI3/GaN heterojunction

Perovskite Single-Crystal Solar Cells: Going Forward

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

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Product

Resources

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Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction