Strain Engineering of Graphene Nanoribbon Transistors Made Using Analytical Quasi-Ballistic Transport Model

Abstract

In this work, the impact of uniaxial strain on the current-voltage characteristics and the key performance metrics of armchair graphene nanoribbon (AGNR) field-effect transistors (FETs) are thoroughly studied by means of an analytical quasi-ballistic transport model that incorporates the effects of hydrogen passivation and third nearest-neighbor interactions. The model leads to compact expressions for the current-voltage characteristics of the device with only two fitting parameters and is verified by atomistic quantum simulations. The values of these parameters should be changed fromdevice to device. The obtained results reveal the tunable nature of the performance metrics of AGNRFETs with the application of tensile strain. Gate capacitance, cutoff frequency, on/off drain-current ratio, intrinsic delay and power-delay product under strain applied to the three distinct families ofAGNRs, are evaluated. This study can offer useful insight and guidance for strain engineering of GNR-based FETs.