Strain engineering of hyperbolic plasmons in monolayer carbon phosphide: a first-principles study

Dehdast, Mahyar; Stampfl, Catherine; Pourfath, Mahdi

doi:10.1039/d2nr06439a

Cited by 3 publications

(2 citation statements)

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“…Previous research on controlling hyperbolic behavior has primarily concentrated on adjusting the extent of the hyperbolic region rather than transitioning between hyperbolic categories [27][28][29][30][31][32][33][34] . By examining the connection between electronic structure anisotropy and hyperbolicity, we can infer that if the valence and conduction bands of a semiconductor near the Fermi level exhibit distinct anisotropy, we can potentially manipulate the hyperbolic categories using doping techniques.…”

Section: B．tight-binding Model For Bi-hyperbolicitymentioning

confidence: 99%

“…Several 2D materials, such as black phosphorus (BP) [21][22] , α-MoO3 [23][24] , and WTe2 [25][26] have been identified as capable of hosting anisotropic 2D plasmons. The dependence of plasmonic characteristics on the carrier density of these 2D materials enables remarkable tunability of the hyperbolic regions within these natural 2D hyperbolic materials [27][28][29][30][31][32][33][34] . Nevertheless, the precise manipulation of hyperbolicity categories remains an unattained goal in these 2D materials.…”

Section: Introductionmentioning

confidence: 99%

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Tunable in-plane bi-hyperbolicity in bismuth monolayer

Zhao,

Hou,

Wang

et al. 2023

Preprint

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The distinctive hyperbolic properties of natural two-dimensional (2D) materials have garnered considerable attention in recent years due to their potential to surpass the limitations of meta-hyperbolic surfaces. It is essential to control hyperbolic regions and the categories of hyperbolicity. In this research, we establish a critical connection between the semiconducting characteristics of 2D materials and their hyperbolic attributes, introducing a concept of “bi-hyperbolicity” using a simple tight-binding model. Based on first-principles calculations, we illustrate how this strategy can be applied to materials like the recently-synthesized bismuth monolayer. Our computations revealed that n-type semiconducting bismuth monolayers exhibit type-I hyperbolicity, whereas p-type semiconducting bismuth monolayers display type-II hyperbolicity. This captivating interplay between hyperbolicity and semiconductivity lays the foundation for crafting in-plane type-I/type-II hyperbolic heterostructures using well-established semiconductor technologies. These heterostructures unlock a plethora of exotic optical phenomena, including negative refraction and negative reflection, which open up new horizons in optical engineering and device design.

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