Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M = Ga, In and X = S, Se, Te) monolayer

Ariapour, Mohammad; Touski, Shoeib Babaee

doi:10.1016/j.jmmm.2020.166922

Cited by 18 publications

(9 citation statements)

References 37 publications

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“…The value of the Rashba coefficient is negligible at M to Γ path and we have reported it along with M to K path. The Rashba coefficient is 0.159eV Å that is smaller than reported values for other 2D materials [42][43][44][45][46][47] .…”

Section: Resultscontrasting

confidence: 60%

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Ghobadi,

Touski

2020

Preprint

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In this paper, the electrical and spin properties of mono-and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to investigate their properties. Fifteen different stacking orders of bilayer HfSSe are considered. The mono-and bilayer demonstrate an indirect bandgap, whereas the bandgap of bilayer can be effectively controlled by electric field. While the bandgap of bilayer closes at large electric fields and a semiconductor to metal transition occurs, the effect of a normal electric field on the bandgap of the monolayer HfSSe is quite weak. Spin-orbit coupling causes band splitting in the valence band and Rashba spin splitting in the conduction band of both mono-and bilayer structures. The band splitting in the valence band of the bilayer is smaller than a monolayer, however, the vertical electric field increases the band splitting in bilayer one. The stacking configurations without mirror symmetry exhibit Rashba spin splitting which is enhanced with the electric field.

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Section: Resultscontrasting

confidence: 60%

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Ghobadi,

Touski

2020

Preprint

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“…The amount of reduction is higher in the compressive regime, and this indicates SOC is more important in the compressive regime. We observed similar effects in group-III monocalchagonides [42]. The bandgap decreases with applying tensile strain, and it goes to zero at 4.5% tensile strain.…”

Section: Conduction Valencesupporting

confidence: 75%

Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb

Touski¹

2020

Preprint

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In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC) consideration. The electron and hole effective mass modify with SOC consideration. The electron and hole effective masses lowered two and ten times, respectively. The location of valleys in conduction and valence band for various strains are explored, and the corresponding effective masses are reported. A lower effective mass is obtained for both electron and hole with applying tensile strain, whereas, the bandgap closes for large tensile strain. A numeric fitting has applied to effective mass versus strain, and an equation for every curve is reported. Finally, the work function of this material for different strains is obtained.

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“…λ K,V increases slightly when strain increases from compressive to tensile regime. The increase of the spin-splitting of the valence band with respect to strain has also observed in the group-III monochalcogenides 33 . One can find from the band structures and Table II, that the first conduction band has a negligible spin-splitting, while the second band demonstrates a considerable spin-splitting.…”

Section: Resultsmentioning

confidence: 60%

Vertical Strain-Induced Modification of the Electrical and Spin Properties of Monolayer MoSi2X4 (X= N, P, As and Sb)

Touski,

Ghobadi

2021

Preprint

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In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct semiconductors. The vertical strain has been selected to modify the electrical properties. The bandgap shows a maximum and decreases for both tensile and compressive strains. The valence band at K-point displays a large spin-splitting, whereas the conduction band has a negligible splitting. On the other hand, the second conduction band has a large spin-splitting and moves down under vertical strain which leads to a large spin-splitting in both conduction and valence bands edges. The projected density of states along with the projected band structure clarifies the origin of these large spin-splittings. These three spin-splittings can be controlled by vertical strain.

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Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M = Ga, In and X = S, Se, Te) monolayer

Cited by 18 publications

References 37 publications

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb

Vertical Strain-Induced Modification of the Electrical and Spin Properties of Monolayer MoSi2X4 (X= N, P, As and Sb)

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