Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures

Lever, L.; Hu, Y.; Myronov, Maksym; Liu, X.; Owens, N.; Gardès, Frédéric; Marko, Igor P.; Sweeney, S. J.; Ikonić, Z.; Leadley, D. R.; Reed, GT; Kelsall, R. W.

doi:10.1109/group4.2011.6053731

Cited by 2 publications

(3 citation statements)

References 6 publications

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“…Clearly, the experimental data of excitonic transition were well consistent with the calculated data at different quantum well thickness, confirming our experimental demonstrations of O-band operations from Ge/Si 0.15 Ge 0.85 MQWs, by simply decreasing the well width down to around 6.5 nm. Additionally, one should note that in order to modulate efficiently at 1.31 lm the excitonic absorption should be further blue shifted to the 1265-1280 lm ($0.97 eV) as in the previous experimental 20,21 and theoretical 18,19 works using Ge/Si 0.4 Ge 0.6 MQWs coherently strained to Si 0.18 Ge 0.78 relaxed layer. From the calculation in Fig.…”

Section: Experiments and Discussionmentioning

confidence: 81%

“…18,19 Experimental studies using vertical p-i-n diodes demonstrated significant absorption modulation from photocurrent spectra thanks to a larger compressive strain applied on the Ge quantum wells with respect to the underlining Si 0.22 Ge 0.78 relaxed layer. 20,21 Using such methodology, an O-band waveguide optical modulator has been recently shown with promising modulation performance. 22 In this paper, we experimentally demonstrate strong optical modulation within the O-band telecommunication wavelength by simply varying the quantum well thickness of the widely studied Ge/Si 0.15 Ge 0.85 MQWs.…”

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confidence: 99%

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O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

Chaisakul

Frigerio

Marris‐Morini

et al. 2014

Journal of Applied Physics

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We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si 0.15 Ge 0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range. V

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Section: Experiments and Discussionmentioning

confidence: 81%

mentioning

confidence: 99%

O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

Chaisakul

Frigerio

Marris‐Morini

et al. 2014

Journal of Applied Physics

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“…Electroabsorption modulation (Refs. [2][3][4], as well as light detection and emission (Ref. 5) based on Ge quantum wells (QWs), have been demonstrated, and optical spin orientation and detection has been recently achieved in similar heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

Cecchi

Gatti

Chrastina

et al. 2014

Journal of Applied Physics

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The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 lm thick Si 1Àx Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1Àx Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

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Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures

Cited by 2 publications

References 6 publications

O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

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