In the present study, the structural, vibrational, electronic,
and elastic properties of single-layer α-Bi are investigated
by performing density functional theory-based first-principles calculations.
Structural optimizations show that free-standing α-Bi possesses
a tilted black phosphorus-like anisotropic structure. The phonon band
dispersions and linear-elastic parameters reveal the dynamical and
mechanical stability of the α-Bi structure, respectively. In
addition, quantum molecular dynamics simulations indicate the thermal
stability of the single layer at room temperature. Electronically,
it is found that α-Bi exhibits an indirect band gap semiconducting
behavior, whose hole and electron effective masses are shown to be
orientation-dependent with the latter being more anisotropic. Such
anisotropic effective masses reveal orientation-dependent transport
properties in single-layer α-Bi. Moreover, the orientation-dependent
elastic features of α-Bi show that at an angle of 45° with
respect to the zigzag (ZZ) orientation, an auxetic behavior is predicted
for the structure. Furthermore, the impact of uniaxial strains along
the two main orientations (ZZ and armchair directions) is investigated
on the vibrational properties of single-layer α-Bi. The phononic
stability of the structure is first predicted at the strain limits
(±5) for both directions, and the results reveal the preserved
stability of the single layer under both compressive and tensile strains.
The calculated Raman spectra under uniaxial strains show that the
type (compressive or tensile) and the direction of the applied strain
can be deduced from the Raman spectra analysis. Overall, strain-induced
modifications in the Raman spectrum of 2D α-Bi in terms of the
peak positions may be useful tools for the characterization of induced
strain in experimental studies.