Strain-Enhanced Colossal Magnetoresistance in Pr0.6Sr0.4MnO3 Thin Films

Kumary, T. Geetha; Amaladass, E. P.; Nithya, R.; Mani, Awadhesh

doi:10.1007/s10948-016-3590-3

Cited by 5 publications

(15 citation statements)

References 24 publications

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“…The value of T Curie is found to shift to higher temperature with an increase in the value of the applied magnetic field. However, the value of T Curie obtained for PSMO/PCMO/STO is found to be lower than that obtained for the bulk PSMO (T Curie = 315 K) 12 . A second transition observed at around 150 K, as indicated by an arrow in Fig.…”

Section: Magnetization Studiescontrasting

confidence: 66%

“…Nonetheless, in the polycrystalline PSMO, the T MIT occurs at temperatures lower than its T Curie 12,16,17 . Large CMR effects near its T MIT have been reported in the PSMO thin films deposited on various substrates compared to the bulk sample 12 . However, the T MIT in the PSMO thin film of ~ 30 nm occurs at a lower temperature ~ 85 K, than the bulk, with a maximum CMR of ~ 90% at 5 T 12 .…”

mentioning

confidence: 97%

“…The ability to deposit the materials in a reactive environment makes PLD a suitable technique for fabricating thin films of oxide materials like manganites. However, the sensitive nature of the manganites towards any external perturbation like strain or lattice distortion alters their physical properties in the thin-film form, making it yet another exciting topic of research interest 1,2,12,13 .…”

mentioning

confidence: 99%

“…The single crystals of Pr 0.6 Sr 0.4 MnO 3 (PSMO) undergo a paramagnetic (PM) to ferromagnetic (FM) transition 12,14,15 (T Curie ~ 315 K) with a concomitant insulator to metal transition (T MIT ) 15 near room temperature, thereby exhibiting a strong correlation between the electrical and magnetic properties. Nonetheless, in the polycrystalline PSMO, the T MIT occurs at temperatures lower than its T Curie 12,16,17 . Large CMR effects near its T MIT have been reported in the PSMO thin films deposited on various substrates compared to the bulk sample 12 .…”

mentioning

confidence: 99%

“…Large CMR effects near its T MIT have been reported in the PSMO thin films deposited on various substrates compared to the bulk sample 12 . However, the T MIT in the PSMO thin film of ~ 30 nm occurs at a lower temperature ~ 85 K, than the bulk, with a maximum CMR of ~ 90% at 5 T 12 . The half-doped manganite, Pr 0.5 Ca 0.5 MnO 3 (PCMO), has been reported to undergo a phase transition from the high temperature paramagnetic (PM) insulating state to a charge-ordered (CO) insulating state below ~ 250 K, followed by a transition into a CE-type antiferromagnetic (AFM) state below ~ 170 K 18 in its bulk form.…”

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confidence: 99%

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Interfacial interaction driven enhancement in the colossal magnetoresistance property of ultra-thin heterostructure of Pr0.6Sr0.4MnO3 in proximity with Pr0.5Ca0.5MnO3

Gayathri

Amaladass

Sathyanarayana

et al. 2023

Sci Rep

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The ultra-thin heterostructure of Pr0.6Sr0.4MnO3(15 nm)/Pr0.5Ca0.5MnO3(15 nm)/SrTiO3 fabricated using pulsed laser deposition technique exhibits the phase-segregated nature wherein the ferromagnetism of Pr0.6Sr0.4MnO3, and the antiferromagnetic state of Pr0.5Ca0.5MnO3 coexist in proximity. The observation of two exciting phenomena in the grown ultra-thin heterostructure, namely, the kinetic arrest and training effect, confirms its phase-segregated nature. The melting of the antiferromagnetic state in Pr0.5Ca0.5MnO3 into a ferromagnetic state due to the interfacial interaction arising from the magnetic proximity of the ferromagnetic clusters of Pr0.6Sr0.4MnO3 have been observed. A metal–insulator transition (TMIT) found at 215 K, close to its Curie temperature (TCurie) observed at 230 K, reveals a strong correlation between the electrical transport and the magnetization of the ultra-thin heterostructure. The electrical conduction in the high-temperature regime is explained in terms of the adiabatic small polaron hopping model. While the resistance in the metallic regime for temperatures above 100 K is contributed by the inelastic scattering due to the two-magnons, in the metallic regime below 100 K, the one-magnon inelastic scattering contribution is prevalent. An enhanced colossal magnetoresistance property near room temperature is obtained in the ultra-thin heterostructure arising from the proximity-driven interfacial interaction, making it a suitable candidate for technological applications near room temperature.

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Section: Magnetization Studiescontrasting

confidence: 66%

mentioning

confidence: 97%

mentioning

confidence: 99%