Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

Zhang, Yonghui; Liang, Huili; Xing, Fei; Gao, Qiqian; Feng, Yu; Sun, Yuping; Mei, Zengxia

doi:10.1007/s11433-023-2307-6

Sci. China Phys. Mech. Astron.

2024

DOI: 10.1007/s11433-023-2307-6

|View full text |Cite

Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

Yonghui Zhang,

Huili Liang,

Fei Xing

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

References 60 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Liu,

Li,

Cheng

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial β‐(AlxGa1‐x)2O3 (0≤ x≤ 0.84) films on c‐plane sapphire substrates using RF magnetron sputtering, it allowed to tune the energy bandgap, achieving values as high as 6.10 eV. The increased luminescence intensity is attributed to the recombination between donor and acceptor transitions induced by Al doping, resulting in more defects. Additionally, the luminescent band experienced blueshifts due to the enhanced bandgaps. Moreover, density of functional theory (DFT) simulations confirmed the sensitivity of the bandgap to Al content, distinguishing between Ga‐dominated (x < 0.5) and Al‐dominated (x > 0.5) β‐(AlxGa1‐x)2O3. Notably, the bandgap increased more rapidly in Ga‐dominated structures compared to Al‐dominated ones. The electronic structure analysis revealed a redistribution of Ga d states from valence to conduction bands, attributed to the introduction of numerous Al p states. These combined experimental and detailed electronic structure investigations proved crucial insights for designing the structure and exploring potential applications of β‐(AlxGa1‐x)2O3 in photonic devices.

show abstract

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Liu,

Li,

Cheng

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

Border Trap-Enhanced Ga₂O₃ Nonvolatile Optoelectronic Memory

Zhang,

Zhu,

Huo

et al. 2024

Nano Lett.

View full text Add to dashboard Cite

Nonvolatile deep ultraviolet optoelectronic memory (DUVOEM) holds immense potential in cyberphysical systems, offering high storage density, swift conversion speeds, and robust data security. However, the current data retention time, typically limited to milliseconds or hours, mostly underperforms the expectations of years as a nonvolatile memory. In this work, we present a β-Ga 2 O 3 /SiO 2 /Si thin-film transistor DUVOEM with an enhanced data storage capability via trapping and releasing of photogenerated holes in border traps. Specifically, the photogenerated holes in β-Ga 2 O 3 will tunnel through SiO 2 and be captured by these defects. Innovatively, the much slower holes' release process from the border traps has been harnessed in developing outstanding nonvolatile optoelectronic memories. Rapid writing and erasing speeds, long-time retention (≥10 years), and high robustness demonstrate its practical application values. This study not only provides a novel strategy for nonvolatile DUVOEM but also provides an instance of functionalizing β-Ga 2 O 3 memory with common defects in Si technology.

show abstract

Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection

Li,

Yan,

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

Polarization-sensitive photodetection has promising prospects for civilian and military applications based on anisotropic semiconductors. However, it is greatly limited due to the lack of valid materials as well as the terrible linear dichroism ratio. In this Letter, a metal–oxide–semiconductor β-Ga2O3 with strong anisotropic property is proposed for highly efficient polarizing detection, which can potentially overcome these limitations. Angle-resolved polarization Raman spectroscopy was performed to confirm excellent anisotropic phonon vibration. Unique narrow solar-blind polarization-sensitive photo-absorption (240–270 nm) can be observed, which can be attributed to the natural anisotropy, referring in particular to the polarization-resolved absorption in the surround of the bandgap of β-Ga2O3. Benefiting from the structural anisotropy, the polarization-sensitive photodetector exhibits an excellent linear dichroic ratio of ∼1.8. Moreover, obvious color change is observed under different polarized angles, providing great potential in polarization imaging. With these advantages, we anticipated that this research will pave avenues for the fabrication of polarization-sensitive solar-blind UV photodetectors.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

Cited by 5 publications

References 60 publications

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Border Trap-Enhanced Ga₂O₃ Nonvolatile Optoelectronic Memory

Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection

Contact Info

Product

Resources

About

Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

Cited by 5 publications

References 60 publications

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Border Trap-Enhanced Ga2O3 Nonvolatile Optoelectronic Memory

Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection

Contact Info

Product

Resources

About

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices

Border Trap-Enhanced Ga₂O₃ Nonvolatile Optoelectronic Memory