Strain filter with gate control in a gapped graphene junction

Chethanom, Thatree; Jongchotinon, Ruanglak; Soodchomshom, Bumned

doi:10.1016/j.spmi.2015.05.051

Cited by 9 publications

(8 citation statements)

References 35 publications

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“…We also show that the conductance peaks of k(k ) G   and k(k ) G   about 0   may occur when a suitable value of chemical potential is chosen (see Fig.2b). The presence of conductance peak is similar to that in gapped graphene strained junction [41], when energy approaches spin-orbit interaction so E   in the NM regions. The energy gap in pure graphene is due only to sublattice symmetry breaking, unlike silicene.…”

Section: (I) Perfect Strain Control Of Pure Lattice-spin By Applying supporting

confidence: 60%

“…2b). The presence of conductance peak is similar to that in gapped graphene strained junction [41], when energy approaches spin-orbit interaction so E   in the NM regions. The energy gap in pure graphene is due only to sublattice symmetry breaking, unlike silicene.…”

Section: (I) Perfect Strain Control Of Pure Lattice-spin By Applying ...supporting

confidence: 60%

“…3a and 3b). We find that from the double peaks would appear [41]. The conductance vanished for large  may be described with decaying wave function to get…”

Section: (I) Perfect Strain Control Of Pure Lattice-spin By Applying ...mentioning

confidence: 86%

“…3a and 3b). We find that from 18 meV    to 7.4 meV  , the junction yields single-resonant conductance peak which may be shifted by varying  along the   axis for 0   , while for 7.4 meV    the double peaks would appear[41]. The conductance vanished for large  may be described with decaying wave function to get .…”

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confidence: 81%

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Strain control of real- and lattice-spin currents in a silicene junction

2017

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We investigate real-and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the junction yields strain filtering effect with perfect strain control of real-(or lattice-) spin currents. (i) By applying electric field without circularly polarized light we show that total current is carried by pure lattice-spin up (or down) electrons tunable by strain. (ii) When circularly polarized light is irradiated onto silicene sheet without applying electric field, total current is carried by pure real-spin up (or down) electrons tunable by strain. High conductance peaks associated with pure real-(or lattice-) spin currents in case ii(or i) occur at specific magnitude of strain, yielding strain filtering effect. Magnitudes of filtered strain due to pure real-(or lattice-) spin currents may be tunable by varying chemical potential. Sensitivity may be enhanced by increasing thickness of strained barrier. Significantly, (iii) when both perpendicular electric field and circularly polarized light are applied, the total current is carried by three species of electron groups tunable by strain. This may lead to controllable numbers of electron species to transport. This result shows that strain filtering effect in a silicene-based junction is quite different from that in graphene junction. Our work reveals potential of silicene as a nanoelectro-mechanical device and spin-valleytronic applications.

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Section: (I) Perfect Strain Control Of Pure Lattice-spin By Applying supporting

confidence: 60%

Section: (I) Perfect Strain Control Of Pure Lattice-spin By Applying ...supporting

confidence: 60%

“…3a and 3b). We find that from the double peaks would appear [41]. The conductance vanished for large  may be described with decaying wave function to get…”

Section: (I) Perfect Strain Control Of Pure Lattice-spin By Applying ...mentioning

confidence: 86%

mentioning

confidence: 81%

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Strain control of real- and lattice-spin currents in a silicene junction

2017

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“…23 Several papers have studied transport properties of strained graphene. [24][25][26][27][28][29][30][31][32][33] Optical conductivity, that is, the frequency-dependent conductivity is one of the particular fields which has attracted attention of scientists both experimentally [34][35][36][37] as well as theoretically for further considerations. [38][39][40][41][42][43][44][45] It is necessary to say that important information on the dynamic of carriers (Dirac fermions) in graphene is reported in optical-absorption experiments investigations.…”

Section: Introductionmentioning

confidence: 99%

Strain effects on the optical conductivity of gapped graphene in the presence of Holstein phonons beyond the Dirac cone approximation

Yarmohammadi

2016

AIP Advances

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In this paper we study the optical conductivity and density of states (DOS) of doped gapped graphene beyond the Dirac cone approximation in the presence of electron-phonon (e-ph) interaction under strain, i.e., within the framework of a full π-band Holstein model, by using the Kubo linear response formalism that is established upon the retarded self-energy. A new peak in the optical conductivity for a large enough e-ph interaction strength is found which is associated to transitions between the midgap states and the Van Hove singularities of the main π-band. Optical conductivity decreases with strain and at large strains, the system has a zero optical conductivity at low energies due to optically inter-band excitations through the limit of zero doping. As a result, the Drude weight changes with e-ph interaction, temperature and strain. Consequently, DOS and optical conductivity remains stable with temperature at low e-ph coupling strengths.

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Spin transport in graphene superlattice under strain

Sattari

2016

Journal of Magnetism and Magnetic Materials

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Strain filter with gate control in a gapped graphene junction

Cited by 9 publications

References 35 publications

Strain control of real- and lattice-spin currents in a silicene junction

Strain control of real- and lattice-spin currents in a silicene junction

Strain effects on the optical conductivity of gapped graphene in the presence of Holstein phonons beyond the Dirac cone approximation

Spin transport in graphene superlattice under strain

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