Strain‐induced nonlinear behavior of electron effective mass in degenerately doped n‐Si(P) under high uniaxial pressure X || [111]

Abstract

The nonlinear behavior of the electron effective mass in degenerately doped n‐Si(P) under high uniaxial pressure X || [111] was observed in the range of the strain‐induced transition from metallic‐ to activation‐type conductivity. The relative contribution of the quadratic term in the effective mass vs. pressure dependence increases with doping. For just metallic crystals of n‐Si(P) the electron effective mass increase is described by only a single quadratic term. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Propiedades electrónicas de semiconductores III-V sometidos a tensión uniaxial en la dirección [111]; un enfoque según el método tight-binding: II. Antimoniuros y Fosfuros

“…For instance, we have the work by Bouhemadou et al on the hydrostatic pressure effects on the elasctic properties of III-P semiconductors[Bouhmadou 2009]. Also, there is a report on the non-linear [111]-strain-induced variation of the electron effective mass in degenerately doped n-Si[Shenderovskii 2009].…”