Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane

Dzuba, J.; Vanko, G.; Babchenko, Oleg; Lalinský, T.; Horvát, František; Szarvas, M; Kováč, Tomáš; Hučko, Branislav

doi:10.1109/asdam.2016.7805936

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…Applied material constants were taken from research reports and contributions introduced in world databases [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. In the second part of the article, we compare the obtained results with the results measured during the experiment [17]. …”

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confidence: 64%

The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

Kováč

Horvát

Hučko

et al. 2017

Strojnícky Casopis – Journal of Mechanical Engineering

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This article is devoted to the comparison of the influence of the piezoelectric matrix properties on the magnitude of the resulting charge when a thin piezoelectric membrane of circular cross section, made from aluminium gallium nitride (Al-GaN), is loaded. The size of change of the electric charge was determined by the numerical analysis and the by the change of the properties of the piezoelectric matrix. The matrix constants were obtained from various sources introduced in world databases.KEYWORDS: piezoelectric, gallium nitride, constitutive equations, average, variance, deviation IntroductionThin Al-GaN membranes have different configurations for their application. In the case of a membrane of a circular cross section (as shown in Fig 1, in the analysed device), it is most common for the measurement of pressure. To apply pressure onto the membrane, it must be fixed around its circumference. The internal structure of piezoelectric materials is highly dependent on their manufacturing process, which then is reflected on their properties. Even a small change in the properties of the piezoelectric material can lead to more pronounced changes in the electrical charge obtained in the so called direct piezoelectric effect, or the change in the properties can lead to significantly different deformations in an inverse piezoelectric effect. Using a numerical methods, we can predict the behaviour of the pressure sensors. It is possible to simulate the different properties of the Al-GaN material and to obtain the assumed values of the electrical charge, respectively the deformation of the material. The first part of the article is devoted to the comparison of the results of 10 sets with different material constants for the aluminium gallium nitride material. Applied material constants were taken from research reports and contributions introduced in world databases [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. In the second part of the article, we compare the obtained results with the results measured during the experiment [17]. The investigated modelThe numerical model is based on a thin membrane used in experimental measurements. The configuration and geometrical properties of the membrane are shown in Fig. 1. It is made of a piezoelectric Al-GaN layer over GaN. The ratio of each corresponding layer is 99.9524% GaN overlaid with 0.0476 % Al-GaN. The membrane is circular with a diameter of 750 µm. The membrane is placed over a ceramic substrate measuring 350 x 350 µm. The thickness of each layer is 4.22 µm and 0.02 µm for GaN and Al-GaN respectively. Once a charge is created, a thin 2D layer of electron gas is produced between the layers and it acts as a transmitter for the Unauthenticated Download Date | 5/12/18 6:08 AM

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confidence: 64%

The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

Kováč

Horvát

Hučko

et al. 2017

Strojnícky Casopis – Journal of Mechanical Engineering

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“…The residual stress distribution along the deepness direction of this multilayer structure is given as Figure 10, where the stress inside the C-Si substrate was achieved by using Equation (2), and that inside the germanium-silicon buffer layers was achieved by using Equation (4). Figure 10 shows that there exists serious residual stress inside the buffer layers.…”

Section: Distribution Of Residual Stress With Depthmentioning

confidence: 99%

“…Because introduced strain leads to an increased carrier mobility and reduced resistance [2], the performance of ε-Si-based devices is improved significantly [3]. In recent years, with continuous developments in ε-Si technology, semiconductor chips have become smaller, faster, and more energy efficient [4]. Strained-silicon technology has been applied widely in core chips inside mobile phones, personal computers, laptops, tablets and even televisions [5].…”

Section: Introductionmentioning

confidence: 99%

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Qiu

Wang

et al. 2018

Applied Sciences

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Strained silicon (ε-Si) is a promising material that could extend Moore's law by enhancing electron mobility. A ε-Si material is usually composed of multiscale, multilayer heterostructures, where the strained-silicon film or strap is tens-of-nanometers thick, and its buffer layers are of the micrometer scale. The structural properties determine the electrical performance and reliability of ε-Si-based devices. Inhomogeneous residual stress is induced during the preparation, which induces ε-Si structure failure. In this work, biaxial strained-silicon films that contain graded and relaxed germanium-silicon buffer layers were prepared on monocrystalline silicon wafers through reduced-pressure chemical-vapor epitaxy. The layer components and thicknesses were measured using energy-dispersive spectroscopy and scanning-electron microscopy. Crystal and lattice characters were observed by using high-resolution transmission-electron microscopy and micro-Raman spectroscopy. The residual stress distribution along cross-sections of the ε-Si multilayer structures was examined by using micro-Raman mapping. The experimental results showed that, with a gradual increase in germanium concentration, the increasing residual stress was suppressed owing to dislocation networks and dislocation loops inside the buffer layers, which favored the practical application. may yield a material/structure that meets the design requirements of geometrical dimensions and structural-mechanical properties [7,8]. Furthermore, the design, manufacture, performance evaluation and control technologies for microelectronics with non-uniform and local-singular stress distribution is regarded as the future of the microelectronics industry [9].The (equal biaxial or uniaxial) strain state and its magnitude determine the optical/electrical properties of ε-Si-based devices [10]. The strain state and magnitude of the ε-Si depend heavily on the buffer-layer properties (such as the element composition, thickness, lattice quality, defects and residual stress) and interfacial properties (such as mismatch and shear stress) [11]. Size miniaturization of a ε-Si-based device leads to increased defect densities and residual stress, which results in a degraded optoelectronic performance and structure reliability of the entire integrated device [12].Experimental studies of multilayer heterogeneous structures, such as strained-silicon, face two major challenges, namely, "multiscale" and "multiproperty coupling". A strained-silicon layer is usually several to tens-of-nanometers thick, whereas the buffer-layer thickness tends to be of the micrometer scale, and the substrate is typically several hundreds of microns thick. Unique key physical and mechanical behaviors that interact exist at each spatial scale. Cross-scale interactions between the multiscale physical-mechanical properties increase the complexity of experimental studies of strain silicon.A number of methods at different spatial scales have been applied to experimental studies on multilayer heterogeneous structures [1...

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“…(a) E-mail: zhaotl@xidian.edu.cn (corresponding author) It is the piezoelectric properties of GaN materials that enable GaN-based devices to improve device performance by adjusting the concentration of 2-DEG in stress engineering [10][11][12][13], strain engineering [5,14], and polarization engineering [15,16], so as to meet different application conditions. Moreover, GaN-based devices promise widely application in many other fields as well, such as pressure sensor [17], stress/strain sensor [18] and acoustic surface wave filters [19], due to piezoelectric properties.…”

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confidence: 99%

Novel electromechanical coupling theory of GaN HEMT structure under mechanical clamping

Wang¹,

Chai²,

Zhao³

et al. 2023

EPL

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As known, the piezoelectric polarization effect makes GaN HEMT have unique electrical characteristics and more widely applications compared with other III-V semiconductor devices. In this letter, a novel electromechanical coupling theory is proposed and verified for the first time for the GaN HEMT heterojunction structure by applying the mechanical clamping boundary conditions in piezoelectric constitutive equations. The total piezoelectric polarization defined as Pcouple in this new electromechanical coupling theory consist of three parts: the spontaneous polarization Psp, the strain-induced piezoelectric polarization Pstrain due to lattice mismatch in growth, and the bias dependent piezoelectric polarization PEz. The output and transfer characteristics of GaN HEMT have been simulated based on the new electromechanical coupling theory and verified in agreement with the experimental results in trend. This theory helps to extend the understanding of the basic physical mechanism of AlGaN/GaN interface and is of great significance to device design and application for GaN-based materials.

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Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane

Cited by 3 publications

References 13 publications

The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Novel electromechanical coupling theory of GaN HEMT structure under mechanical clamping

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