Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayers

Abstract

Spin-gapless semiconductor (SGS) materials are regarded as the most promising candidates for ideal massless and dissipationless states towards low-power spintronics device application. Here, we propose a spin-gapless semiconducting black arsenic-phosphorus...

Interface engineering strategy for multisource spintronic devicesviaTMPS4modulation of black-phosphorus

“…32,33 BP shows high quantum efficiency (QE) and detection rates in IR. [34][35][36] In addition, the VBM and CBM of BP are located at the point of G corresponding to the VBM of TMPS 4 . Through the formation of BP/TMPS 4 heterojunction, photocarriers can flow unimpeded along the type II electronic band and transport directly through the interlayer valley of BP and TMPS 4 , further enriching the applications in optoelectronic devices.…”

Mini-review of interesting properties in Mn2CoAl bulk and films

“…In 2018, Zhang et al (2018) proposed the nodal ring spin-gapless semiconducting state in a 2D HK lattice via first-principle calculations. In 2022, Ding et al (2022) summarized almost all the predicted nodal ring/line spin-gapless semiconductors in 2D and 3D materials ( Guan et al, 2013 ; Li and Yang, 2013 ; Ding and Wang, 2015 ; Wang et al, 2016b ; Rasool et al, 2016 ; Wang et al, 2017c ; Liu et al, 2017 ; Deng et al, 2018b ; Wang et al, 2018 ; Huang et al, 2019b ; Wu et al, 2020b ; Guo et al, 2020 ; Li et al, 2021 ; Wang et al, 2021 ; Ji et al, 2022 ; Wu et al, 2022 ) in the past 3 years. Remarkably, they ( Ding et al, 2022 ) also provided three valuable suggestions for the future theoretical design of nodal ring/line spin-gapless semiconductors.…”