Strain and electric eld dependent electronic and optical properties have been calculated using density functional theory (DFT) and time-dependent DFT (TD-DFT) for GaInS 2 monolayer. GaInS 2 monolayer shows an indirect band gap of 1.79 eV where valance band maxima (VBM) and conduction band maxima (CBM) rest between K and Î point and at Î point, respectively. Under a particular tensile strain (8%), a phase change from semiconductor to semimetal has been noticed. While at 4% compressive strain, the material changes from indirect to direct band gap of 2.22 eV having VBM and CBM at Î point. With further increase in compressive strain, CBM shifted from Î to M point, which leads to an indirect band gap again. The electric eld also affects the band structure of monolayer GaInS 2 and shows the transition between indirect to direct band gap at positive electric eld of 4 V/nm, which acts normal to the surface. The strain-dependent optical properties are also calculated, which suggests that the absorption coe cient increases with compressive strain.