Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion

Yang, Bin; Souza, Joel De; Saenger, K. L.; Bedell, Steve; Reznicek, A.; Adam, Thomas; Hopstaken, Marinus; Sadana, D. K.

doi:10.1149/1.2986864

ECS Trans.

2008

DOI: 10.1149/1.2986864

|View full text |Cite

Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion

Bin Yang

Joel De Souza²,

K. L. Saenger³

et al.

Abstract: The influence of P diffusion on the thermal stability of epitaxial Si:C films has been studied. P diffusion is shown to greatly contribute to the strain loss in epitaxial Si:C films. It is proposed that the strain loss is mainly caused by the interaction of Si interstitial atoms injected by P diffusion with substitutional C atoms, driving them to non-substitutional lattice sites.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2014

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

View full text Add to dashboard Cite

Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below b-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further b-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 Â 10 14 atom/cm 2 ) for the retention of strain stability in phosphorus doped Si:C. V C 2014 AIP Publishing LLC. [http://dx.

show abstract

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion

Cited by 1 publication

References 11 publications

On the doping limit for strain stability retention in phosphorus doped Si:C

On the doping limit for strain stability retention in phosphorus doped Si:C

Contact Info

Product

Resources

About