Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

Vásquez, G. Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Calliope; Johansen, K. M.; Maestre, David; Cremades, Ana; Prytz, Øystein; Moe, Anne; Kuznetsov, A. Yu.; Vines, Lasse

doi:10.1021/acs.nanolett.0c03472

Cited by 14 publications

(23 citation statements)

References 36 publications

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“…Electric fields offer promising means of manipulating and controlling SPEs, as demonstrated by recent studies on spectral tuning of the V Si [23][24][25] and divacancy (V Si V C ) [26][27][28] via the Stark effect [29]. Notably, it was recently proposed [12] and shown [30] that also the local inhomogeneties modifying emission energies can be exploited, by embedding V Si defects in SiC micro-and nanoparticles of predominantly the 6H polytype. While Stark effect tuning yielded V Si (in 4H-SiC) emission shifts of 1-3 meV [23,24], strain effects may correspondingly cause emission tuning of the characteristic V Si ZPLs (in 6H-SiC) of up to 26 meV [30].…”

Section: Introductionmentioning

confidence: 99%

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Bathen

Galeckas²,

Karsthof³

et al. 2021

Phys. Rev. B

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Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication and sensing applications. However, factors such as emission brightness, purity and indistinguishability are limited by interactions between localized defect states and the surrounding environment. Therefore, it is important to map the full emission spectrum from each SPE, to understand the complex interplay between the different defect configurations, their surroundings and external perturbations. Herein, we investigate a family of regularly spaced sharp luminescence peaks appearing in the near-infrared portion of photoluminescence (PL) spectra from n-type 4H-SiC samples after irradiation. This periodic emitter family, labeled the L-lines, is only observed when the zero-phonon line signatures of the negatively charged Si vacancy (so-called V-lines) are present. The L-lines appear with 1.45 meV and 1.59 meV energy spacing after H and He irradiation and increase linearly in intensity with fluence -reminiscent of the intrinsic defect trend. Furthermore, we monitor the dependence of the L-line emission energy and intensity on heat treatments, electric field strength and PL collection temperature, discussing these data in the context of the L-lines. Based on the strong similarity between the irradiation, electric field and thermal responses of the L-and V-lines, the L-lines are attributed to the Si vacancy in 4H-SiC. The regular and periodic appearance of the L-lines provides strong arguments for a vibronic origin explaining the oscillatory multi-peak spectrum. To account for the small energy separation of the L-lines, we propose a model based on rotations of distortion surrounding the Si vacancy driven by a dynamic Jahn-Teller effect.

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Section: Introductionmentioning

confidence: 99%

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Bathen

Galeckas²,

Karsthof³

et al. 2021

Phys. Rev. B

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show abstract

“…[97] The same study predicted even larger strain coupling parameters in the 6-7 eV per strain range along the axial (0001) direction, foreshadowing larger ZPL shifts for different sample types. Importantly, strain-induced ZPL shifts in the 20-30 meV range [201] far exceed the emission tuning of 1-3 meV achieved by electric field modification of SiC emitters. [28,42,158] Thus, local strain variations can have a potentially detrimental impact on photon indistinguishability, with emitted energies being closely related to local matrix variations.…”

Section: Hostmentioning

confidence: 85%

“….0 2 ( R T ) [22] 637 [61] 10 6 [ 226] 0.1 [ 226] 3-5 0.04 [ 176] 0.4 [ 195] C S i V − 1.4-2.1 [82] 0.04 (4 K) [75] 738 [73] 10 6 [73] 0.1 [73] 70 [21] 0.37 [ 197] C G e V − 1.9-2.7 [82] 0.1 (5 K) [81] 602 [80] 0.05 [80] 70 [80] SiC V − Si 1.2-2.5 [ 41,42] 20 (17 K) [ 227] 858-916 [94] 10 4 [52] 0.25 [27] 6-9 [97] 3 [ 158] 26 [ 201] SiC [44] 64 (5 K) [ 117] 1078-1134 [84] 10 5 [56] 0.06 [56] 3-6 [56] 2.5 [28] SiC [45] 640-680 [87] 10 6 [87] 0.1 [87] h-BN 560-780 [ 132] 10 6 [ 228] 0.08 [ 229] 81 [ 134] 15 [ 185] 65 [ 202] WSe 2 730-750 [ 132] 0.12 [ 204] 21 [ 230] 18…”

Section: Hostmentioning

confidence: 99%

Section: Hostmentioning

confidence: 99%

mentioning

confidence: 99%

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Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Bathen

Vines

2021

Adv Quantum Tech

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Point defects in semiconductors are emerging as an important contender platform for quantum technology (QT) applications, showing potential for quantum computing, communication, and sensing. Indeed, point defects have been employed as nuclear spins for nanoscale sensing and memory in quantum registers, localized electron spins for quantum bits, and emitters of single photons in quantum communication and cryptography. However, to utilize point defects in semiconductors as single-photon sources for QT, control over the influence of the surrounding environment on the emission process must be first established. Recent works have revealed strong manipulation of emission energies and intensities via coupling of point defect wavefunctions to external factors such as electric fields, strain and photonic devices. This review presents the state-of-the-art on manipulation, tuning, and control of single-photon emission from point defects focusing on two leading semiconductor materials-diamond and silicon carbide.

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Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Selim

2023

Physica Status Solidi (a)

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Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.

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Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

Cited by 14 publications

References 36 publications

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

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