Strain profiles and radii of semiconductor rolled‐up tubes made by a single material

Laniel, Dominique; Shtinkov, N.

doi:10.1002/pssb.201248387

Cited by 3 publications

(3 citation statements)

References 23 publications

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“…This corresponds to the other experiment results. One study reported that the residual strain varied between 4.2% and zero, and maximum strain happened at the silicongermanium interface [12]. Another study demonstrated that the growth eigenstrain of LPCVD (low-pressure chemical vapor deposition) polysilicon film at 615 °C was not uniform through the thickness, but decreased from 9 × 10 -4 to about zero as the deposited film thickness increased [15].…”

Section: Resultsmentioning

confidence: 99%

“…A concept to make self-positioned micromachined structures by using the strain in a pair of lattice-mismatched epitaxial layers has been introduced [9]. Curvature estimation for the hinged multilayer structure with lattice mismatch strain has been investigated and the strain profile throughout the layered thickness has been demonstrated [10][11][12]. However, only the cases with initial strain due to the lattice mismatch or thermal loading were accounted for.…”

Section: Introductionmentioning

confidence: 99%

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Parametric study of electroplating conditions on mismatch strain of thin film for self-positioning of MEMS

Kim¹

2015

J. Micromech. Microeng.

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In this paper, we report a detailed investigation of mismatch strain profiles taking account of the effects of process conditions, specifically the electrodeposition current density and temperature. This concept is demonstrated using the standard AFM (atomic force microscope) optical method. First, the thin layer of nickel to be measured is electrodeposited onto the tip side of the AFM cantilever at various current densities and temperatures. Then the cantilever deflections are measured by detecting the position change of the laser on the detector shifts and converted into the quantitative mismatch strain by appropriate mechanics. For a given deposition thickness, the magnitude of the mismatch strain increases with an elevation of the current density or plating temperature. The maximum deflection rate and mismatch strain happen on the interface when two different materials are connected. Next, the determined mismatch strain is further assessed experimentally by comparing its predictions for the self-deformed shape and the measured deflections of the AFM cantilever.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Parametric study of electroplating conditions on mismatch strain of thin film for self-positioning of MEMS

Kim¹

2015

J. Micromech. Microeng.

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“…One study reported that the mismatch strain of LPCVD polysilicon film at 615 °C was not uniform through the thickness and decreased 9 × 10 -4 to about zero when the deposited film thickness increased [35]. Another study reported that the residual strain varied between 4.2% and zero, and maximum strain occurred at the Si/Ge interface [36]. One of the possible sources for mismatch strain is the lattice misfit, defined as = − f a a a ( )/ , s f s where a s (5.430 Å) and a f (3.520 Å) are the lattice constant of the silicon and film, respectively.…”

Section: Resultsmentioning

confidence: 99%

The effect of electrodeposition process parameters on residual stress-induced self-assembly under external load

Kim

Woo

Boyd

2014

J. Micromech. Microeng.

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The authors (Boyd et al 2007 J. Micromech. Microeng. 17 452-61) presented a methodology for using residual stresses due to mismatch strains as a means of self-assembling microstructures under external loading during material deposition. Assembly of two components was considered: one component was subjected to deposition and was modeled as an Euler-Bernoulli beam, and the other component was not deposited and was modeled as a linear spring. This work experimentally extends Boyd et al (2007 J. Micromech. Microeng. 17 452-61) to account for the effects of process conditions, specifically the electrodeposition current density and temperature, which affect both the Young's modulus and the mismatch strain. First, nickel was electrodeposited onto an atomic force microscope (AFM) cantilever, and the cantilever deflections at various current densities and temperatures were measured by using the resonance method of AFM and the measured deformation of the cantilever was converted into the quantitative mismatch strain by appropriate mechanics. For a given deposition thickness, the magnitude of the mismatch strain increased with increasing current density or plating temperature. The Young's modulus decreased with increasing current density and increased slightly with increasing temperature. Next, the self-assembly model was experimentally verified by electrodepositing nickel onto an AFM cantilever beam in contact with a second AFM beam, serving as the spring, that does not undergo deposition. For a given deposition thickness, the spring deflection increased with increasing current density and increasing deposition temperature.

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Strain-induced vertical self-organization of semiconductor quantum dots: A computational study

Shtinkov

2013

Journal of Applied Physics

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Atomistic strain simulations based on the valence force field method are employed to study the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the QD shape, dimensions, and materials parameters are systematically investigated, varying independently the following parameters: spacer width H, QD lateral spacing D, base b, and height h, slope of the side facets, elastic properties of the dot and the substrate materials, and lattice mismatch between the dot and the substrate. The transition between vertically aligned and anti-aligned structures is found to be determined mainly by the ratios H/D and b/D, as well as by the strain anisotropy of the substrate and to a lesser extent of the QD. The dependence on the QD height h is significant only for steep side facets and large aspect ratios h/b, and the effects of the lattice mismatch strain and the bulk elastic moduli are found to be negligible. The comparison with experimental data shows an excellent agreement with the results from the simulations, demonstrating that the presented analysis results in precise theoretical predictions for the vertical self-organization regime in a wide range of QD materials systems.

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Strain profiles and radii of semiconductor rolled‐up tubes made by a single material

Cited by 3 publications

References 23 publications

Parametric study of electroplating conditions on mismatch strain of thin film for self-positioning of MEMS

Parametric study of electroplating conditions on mismatch strain of thin film for self-positioning of MEMS

The effect of electrodeposition process parameters on residual stress-induced self-assembly under external load

Strain-induced vertical self-organization of semiconductor quantum dots: A computational study

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