Strain profiles in thin films: influence of a coherently diffracting substrate and thickness fluctuations

Boulle, Alexandre; Conchon, Florine; Guinebretière, René

doi:10.1107/s0021889808036406

Cited by 8 publications

(8 citation statements)

References 36 publications

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“…Refs. [51][52][53]. Furthermore, on the corresponding RSM (see Figure 1), only a vertical streak (labelled 'D') coming from the damaged (irradiated) region of the crystals is observed.…”

Section: Xrd Investigationmentioning

confidence: 99%

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

Debelle¹,

Thomé²,

Dompoint³

et al. 2010

J. Phys. D: Appl. Phys.

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6H-SiC and 3C-SiC single crystals were simultaneously irradiated at room temperature with 100-keV Fe ions at fluences up to 4x10 13 cm-2 (~0.7 dpa), i.e. up to amorphization. The disordering behaviour of both polytypes has been investigated by means of Rutherford backscattering spectrometry in the channelling mode and synchrotron X-ray diffraction. For the first time, it is experimentally demonstrated that the general damage build-up is similar in both polytypes. At low dose, irradiation induces the formation of small interstitial-type defects. With increasing dose, amorphous domains start to form at the expense of the defective crystalline regions. Full amorphization of the irradiated layer is achieved at the same dose (~0.45 dpa) for both polytypes. It is also shown that the interstitial-type defects formed during the first irradiation stage induce a tensile elastic strain (up to ~3.8%) to which is associated an elastic energy. It is conjectured that this stored energy destabilizes the current defective microstructure observed at low dose and stimulates the formation of the amorphous nanostructures at higher dose. Finally, the disorder accumulation has been successfully reproduced with two models (namely MSDA and DI/DS). Results obtained from this modelling are compared and discussed in the light of experimental data.

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“…Refs. [51][52][53]. Furthermore, on the corresponding RSM (see Figure 1), only a vertical streak (labelled 'D') coming from the damaged (irradiated) region of the crystals is observed.…”

Section: Xrd Investigationmentioning

confidence: 99%

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

Debelle¹,

Thomé²,

Dompoint³

et al. 2010

J. Phys. D: Appl. Phys.

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“…Note that if N knots are used, the strain profile is actually divided into N À 3 equally sized regions. More details and a discussion concerning the advantages of using cubic B-splines can be found elsewhere (Boulle et al, 2003(Boulle et al, , 2009. A representation of a strain profile defined by eight basis functions is given in Fig.…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…The fitting of experimental data with a calculated model consists in minimizing an appropriate error function, which measures the difference between the experimental and the calculated curves. In the following we make use of the following error function (Boulle et al, 2009):…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…Despite this undeniable interest, GSA has to date not been used for the analysis of XRD data. We show in this article that GSA, combined with a cubic B-spline strain profile (Boulle et al, 2003(Boulle et al, , 2009, allows one to overcome the phase problem and hence to retrieve strain profiles in a few seconds. Details concerning ion implantation and XRD data acquisition are given in x2.…”

Section: Introductionmentioning

confidence: 97%

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Strain-profile determination in ion-implanted single crystals using generalized simulated annealing

Boulle

Debelle

2010

J Appl Cryst

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International audienceA novel least-squares fitting procedure is presented that allows the retrieval of strain profiles in ion-implanted single crystals using high-resolution X-ray diffraction. The model is based on the dynamical theory of diffraction, including a B-spline-based description of the lattice strain. The fitting procedure relies on the generalized simulated annealing algorithm which, contrarily to most common least-squares fitting-based methods, allows the global minimum of the error function (the difference between the experimental and the calculated curves) to be found extremely quickly. It is shown that convergence can be achieved in a few hundred Monte Carlo steps, i.e. a few seconds. The method is model-independent and allows determination of the strain profile even without any ‘guess' regarding its shape. This procedure is applied to the determination of strain profiles in Cs-implanted yttria-stabilized zirconia (YSZ). The strain and damage profiles of YSZ single crystals implanted at different ion fluences are analyzed and discussed

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“…It is determined by only four parameters in contradistinction to B-spline basis functions [18,24,25]. In our case of two-stage implantation, the strain distribution in the InSb:Be + layers is described by a sum of two asymmetric Gaussians: where τ i and ρ i are the maximum value of strain and its depth, respectively, and σ i1 , σ i2 -full widths at half maximum of the i-th Gaussian function.…”

Section: The Modelmentioning

confidence: 99%

Modeling of X-ray rocking curves for layers after two-stage ion-implantation

Liubchenko¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be + ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke-Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(111) layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 µC, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0.1%. Additionally, an amorphous layer with significant thickness was found in the implantation region.

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Strain profiles in thin films: influence of a coherently diffracting substrate and thickness fluctuations

Cited by 8 publications

References 36 publications

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

Strain-profile determination in ion-implanted single crystals using generalized simulated annealing

Modeling of X-ray rocking curves for layers after two-stage ion-implantation

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