Strain-related recombination mechanisms in polar InGaN/GaN MQWs on amorphous Si<sub>x</sub>C<sub>1-x</sub> buffers

Lin, Tao; Wang, Fangze; Cheng, Chih-Hsien; Chen, Shuai; Feng, Zhe Chuan; Lin, G.-T.

doi:10.1364/ome.8.001100

Cited by 8 publications

(6 citation statements)

References 18 publications

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“…Picosecond times have been reported, , which are much shorter than the ones for c -plane InGaN/GaN quantum wells (∼1.5 ns at 300 K) . Similar values (21–35 ps) have been found for polarization-free InGaN/GaN multiquantum wells (MQWs) wires at 300 K. , In addition, carrier decay rates that deviate from the single-exponential curves were revealed, indicating multiple carrier localization effects present in core–shell InGaN/GaN heterostructures . While ensembles of wires are often investigated by time-resolved photoluminescence (TRPL), , to date only little attention has been paid to carrier decay rates in single wires using more sophisticated approaches, like time-resolved cathodoluminescence (TRCL) and ultrafast optical microscopy .…”

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confidence: 66%

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

et al. 2021

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Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution. However, optical spectroscopic information can be also extracted using synchrotron pulses in a hard X-ray nanoprobe, exploiting a phenomenon called X-ray excited optical luminescence. Here, with 20 ps time resolution and 80 nm lateral resolution, we applied this timeresolved X-ray microscopy technique to individual core−shell InGaN/GaN multiple quantum well heterostructures deposited on GaN wires. Our findings suggest that the m-plane related multiple quantum well states govern the carrier dynamics. Likewise, our observations support not only the influence of In incorporation in the recombination rates, but also carrier localization phenomena at the hexagon wire apex. In addition, our experiment calls for further investigations of the spatiotemporal domain on the underlying mechanisms of optoelectronic nanodevices. Its great potential becomes more valuable when time-resolved X-ray excited optical luminescence microscopy is used in operando with other methods, such as X-ray absorption spectroscopy.

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confidence: 66%

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

et al. 2021

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“…Следует отметить, что до наших исследований не было сообщений о росте монокристаллических эпитаксиальных пленок GaN на темплейтах типа SiC/por-Si. Использование карбида кремния в качестве буфера для высококачественной эпитаксии GaN весьма перспективно, и, как уже было показано в целом ряде работ, на основе SiC/c-Si темплейтов могут быть созданы высокоэффективные светодиоды [48,49].…”

Section: обсуждение полученных результатовunclassified

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)

Seredin¹,

Голощапов²,

Zolotukhin³

et al. 2020

Физика И Техника Полупроводников

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Комплексом структурно-спектроскопических методов диагностики исследовано влияние переходного слоя нанопористого кремния на оптические свойства слоев GaN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота (МПЭ ПА) на темплейтах SiC/por-Si/c-Si. Впервые показано, что использование технологии МПЭ ПА для синтеза GaN на виртуальной подложке SiC/por-Si/c-Si позволило нам получить пленку GaN со значительно более высоким структурным качеством и оптическим совершенством и при значительно более низкой температуре роста, чем в аналогичных работах, в которых демонстрировался рост с использованием пористых подложек Si. Использование нанопористого por-Si слоя позволяет улучшить структурные и морфологические свойства эпитаксиального слоя GaN, а также добиться у него уникальных оптических и электрофизических характеристик. Полученные данные послужат важным материалом для понимания основ физики наногетероструктур GaN/SiC/por-Si, способствуя их потенциальному применению в оптоэлектронике. Ключевые слова: гибридные гетероструктуры, карбид кремния, нитрид галлия, нанопористый кремний, молекулярно-пучковая эпитаксия с плазменной активацией азота.

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“…Membrane separation processes have been widely utilized, for example, the InGaN LED layers has been separated from the Al 2 O 3 substrates through the laser lift-off process, , the chemical lift-off process, − and chemical-free transfer process . InGaN-based LEDs grown on Si substrates has been lifted-off through the dry etching process and the wet etching process − on Si substrates. The device structures separated from gallium arsenide (GaAs) substrates have been reported through the surface tension-assisted epitaxial lift-off process .…”

Section: Introductionmentioning

confidence: 99%

Bendable InGaN Light-Emitting Nanomembranes with Tunable Emission Wavelength

Lin

et al. 2018

ACS Appl. Mater. Interfaces

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The integration of light-emitting diodes (LEDs) into the flexible devices has exhibited a great potential in the nextgeneration consumer electronics. In this study, we have demonstrated an exfoliated InGaN nanomembrane LED (NM-LED) separated from a GaN/sapphire substrate through an electrochemically wet etching process. The peak wavelengths blue-shifted phenomenon of the photoluminescence (PL) and the electroluminescence spectra were observed on the free-standing NM-LED compared to the nontreated LED with the same structure, which can be ascribed to the partial strain relaxation of the LED structure confirmed by the Raman spectra and the X-ray diffraction curves. A small divergent angle of the PL emission light has also been observed on the NM-LED. Moreover, the peak emission wavelength of this NM-LED can be even modulated from a red shift (521.7 nm) to a blue shift (500.4 nm) compared with that of the flat state (509.4 nm) while being curved convexly from top p-GaN:Mg side to bottom n-GaN:Si side. Our study provides an elegant way to develop a bendable light source with variable emission wavelengths through the mechanical deformation method.

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Strain-related recombination mechanisms in polar InGaN/GaN MQWs on amorphous Si_xC_1-x buffers

Cited by 8 publications

References 18 publications

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)

Bendable InGaN Light-Emitting Nanomembranes with Tunable Emission Wavelength

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Strain-related recombination mechanisms in polar InGaN/GaN MQWs on amorphous SixC1-x buffers

Cited by 8 publications

References 18 publications

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)

Bendable InGaN Light-Emitting Nanomembranes with Tunable Emission Wavelength

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Strain-related recombination mechanisms in polar InGaN/GaN MQWs on amorphous Si_xC_1-x buffers