Strain relaxation in graded SiGe grown by ultra-high vacuum chemical vapor deposition (UHVCVD)

Wu, Huizhen; Huang, J.Y; Ye, Z.Z; Jiang, Xiuming; Shou, Xinyi; Que, Duanlin

doi:10.1016/s0022-0248(98)00026-8

Cited by 5 publications

(2 citation statements)

References 17 publications

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“…The peak at 508 cm -1 belongs to the Si-Si band in the SiGe layer. Using this peak position as well as the peak positions of Si-Ge and Ge-Ge bands, the magnitude of stress in the strained Si layer and the SiGe layer together with the Ge content can be determined using the equations discussed below (Wu et al 1998 ple S11, made under similar conditions, the strained Si peak is at 512.71 cm -1 , which lead to the stress magnitude of 3.65 × 10 9 . For sample S6, the Ge content in SiGe constant composition layer is 21.27%, while for S11 x = 22.2%.…”

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Composition and stress analysis in Si structures using micro‐raman spectroscopy

McCarthy

Bhattacharya

et al. 2004

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Strained silicon (Si) technology enables improvements in complementary metal oxide semiconductor (CMOS) performance and functionality via replacement of the bulk, cubic-crystal Si substrate with an Si substrate that contains a tetragonally distorted, biaxially strained Si thin film at the surface. Here we use Raman spectroscopy to allow us to characterise growth processes of strained si, and to characterise the resulting level of strain/stress in the si and the effect it has on the underlying layer of graded SiGe.

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Composition and stress analysis in Si structures using micro‐raman spectroscopy

McCarthy

Bhattacharya

et al. 2004

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“…A number of different CVD reactors have been developed for the low temperature growth of strained Sii_ x Ge x films. These can be conveniently divided into ultra-high vacuum CVD (UHV-CVD) at growth pressures of less than 10 Pa [47][48][49][50] and low pressure CVD (LPCVD) with pressures ranging from 10 to 1000 Pa [51]. In this study,…”

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confidence: 99%