Strain relaxation in high Ge content SiGe layers deposited on Si

Capellini, Giovanni; Seta, M. De; Busby, Yan; Pea, Marialilia; Evangelisti, F.; Nicotra, Giuseppe; Spinella, C.; Nardone, M.; Ferrari, C.

doi:10.1063/1.3327435

Cited by 71 publications

(74 citation statements)

References 38 publications

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“…The relaxation value was determined to be 90.5% 6 0.5%. The relaxation values of these seed layers agree with the observation made by Capellini 17 about strain relaxation of high Ge content compressively strained Si 1Àx Ge x on (100) Si substrate, where layers up to 200 nm thick were still partially strained.…”

Section: Lt Ge Seed Layersupporting

confidence: 80%

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Dobbie¹,

Myronov²,

Leadley³

2013

Journal of Applied Physics

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Epitaxial growth of Ge on Si has been investigated in order to produce high quality Ge layers on (110)- and (111)-orientated Si substrates, which are of considerable interest for their predicted superior electronic properties compared to (100) orientation. Using the low temperature/high temperature growth technique in reduced pressure chemical vapour deposition, high quality (111) Ge layers have been demonstrated almost entirely suppressing the formation of stacking faults (< 107 cm−2) with a very low rms roughness of less than 2 nm and a reduction in threading dislocation density (TDD) (∼ 3 × 108 cm−2). The leading factor in improving the buffer quality was use of a thin, partially relaxed Ge seed layer, where the residual compressive strain promotes an intermediate islanding step between the low temperature and high temperature growth phases. (110)-oriented layers were also examined and found to have similar low rms roughness (1.6 nm) and TDD below 108 cm−2, although use of a thin seed layer did not offer the same relative improvement seen for (111).

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Section: Lt Ge Seed Layersupporting

confidence: 80%

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Dobbie¹,

Myronov²,

Leadley³

2013

Journal of Applied Physics

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“…The three curves corresponding to Ge/GeSn samples are undistinguishable and they reflect, following the method in Ref. 19, an in plane strain in the Ge epi-layer of 1.1%, a value in very good agreement with that obtained by XRD (see Fig. 1).…”

Section: Resultssupporting

confidence: 73%

Epi-cleaning of Ge/GeSn heterostructures

Gaspare

Sabbagh

Seta

et al. 2015

Journal of Applied Physics

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We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1 %) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100-300 °C range

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“…The intense and sharp peak located at 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 13 and on the SiO 2 area between Ge islands (blue). The spectrum of Ge substrate as a reference shows a Raman line arising at ~300 cm -1 , corresponding to the Ge-Ge Raman mode 44 . For the "on islands" spectrum, besides the strong Si line, two other lines appear at ~297 cm -1 and at ~397 cm -1 , corresponding to the Ge-Ge and Si-Ge modes, respectively 44 .…”

Section: Resultsmentioning

confidence: 99%

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Niu

Capellini

Łupina

et al. 2016

ACS Appl. Mater. Interfaces

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Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent Ge islands selectively grown on nano-tip patterned Si (001) substrates. The Si-tip patterned substrate, fabricated by complementary metal-oxidesemiconductor (CMOS) compatible nanotechnology, features ~50 nm wide Si areas emerging from a SiO 2 matrix and arranged in an ordered lattice. Molecular beam epitaxy (MBE) growths result in Ge nano-islands with high selectivity and having homogeneous shape and size. The ~850°C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 at.% Ge). Nano-tip patterned wafers result in geometric, kinetic diffusion barrier intermixing hindrance confining the major intermixing to the pedestal region of Ge islands where kinetic diffusion barriers are however high. Theoretical calculations suggest that the thin SiGe layer at the interface plays nevertheless a significant role in realizing our fully coherent Ge nano-islands free from extended defects especially dislocations. Single layer graphene (SLG)/Ge/Si-tip Schottky junctions were fabricated and thanks to the absence of extended defect in Ge islands, they demonstrate high performance photodetection characteristics with responsivity and I on /I off ratio of ~45 mA/W and ~10 3 , respectively.

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Strain relaxation in high Ge content SiGe layers deposited on Si

Cited by 71 publications

References 38 publications

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Epi-cleaning of Ge/GeSn heterostructures

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

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