Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation

Chen, Jenn–Fang; Yang, Chu‐Wen; Wu, Yue; Chang, Li; Y., J.

doi:10.1063/1.3028235

Cited by 5 publications

(1 citation statement)

References 31 publications

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“…In previous studies of transmission electron emission, 14) the incorporation of N into InAs QDs has been shown to relax by the induction of threading dislocations in the top GaAs layer and localized defects near the QDs. The threading dislocations that propagate from the QDs to the surface of the sample are probably generated by the gliding of interfacial dislocations, because elastic strain is associated with a shear stress.…”

Section: Carrier Distribution and Dlts Measurementmentioning

confidence: 97%

Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Yang

Hsieh

et al. 2011

Jpn. J. Appl. Phys.

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The electron-emission properties of nitrogen-induced (N-induced) localized defects in InAsN/GaAs quantum dots (QDs) are investigated in detail by capacitance-voltage (C-V) profiling and bias-dependent deep-level transient spectroscopy (DLTS). The incorporation of nitrogen (N) into InAs QDs is shown to produce localized defects near QDs and threading-dislocation-related defects in the top GaAs layer. The threading dislocation is associated with an electron-emission energy of approximately 0.648 eV and emission from the sample surface toward the QDs. The electronemission energy from the QDs associated with the localized defects increases from 0.19 to 0.36 eV, indicating that both types of defect near QDs have low electron emission energies. Therefore, the change in emission energy is attributable to the defects across the QD interface where a band offset exists. The C-V profile at 300 K shows extended carrier depletion near the QDs. As ac frequency increases, an electron-emission peak emerges at the QDs; this peak is followed by another prominent peak, suggesting that the localized defect that is responsible for this latter peak has an energy below the QD electron ground state. On the basis of a C-V profile simulation, this defect is located at the QD at the observed emission energy below the GaAs conduction band, 360 meV. A comparison with InAsN QD and strain relaxation InAs QD samples reveals that the localized defect arises from a nitrogen alloy fluctuation in the QD. The energy location of this defect reveals a possibility that incorporated N is associated with a particular mode.

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Section: Carrier Distribution and Dlts Measurementmentioning

confidence: 97%

Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Yang

Hsieh

et al. 2011

Jpn. J. Appl. Phys.

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Studies on the resistance switching properties of the La0.5Ca0.5MnO3/Nb : SrTiO3 heterojunction

Wang

Yao

et al. 2011

Solid State Communications

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Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Golovynskyi

Datsenko

Seravalli

et al. 2017

Semicond. Sci. Technol.

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Deep levels in metamorphic InAs/In x Ga 1−x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/ GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x=0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

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Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation

Cited by 5 publications

References 31 publications

Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots

Studies on the resistance switching properties of the La0.5Ca0.5MnO3/Nb : SrTiO3 heterojunction

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

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