2005
DOI: 10.1016/j.jcrysgro.2005.04.031
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Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation

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Cited by 11 publications
(6 citation statements)
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“…Results from the AFM analysis of sample oxidized 60 minutes are given in Figure 7. The Rms value of 1.47 nm measured on 10 μm square is close to data reported in literature (1,5,10). The cross-hatch pattern on Figure 7 is commonly observed on the surface of relaxed or partially relaxed SGOI layers because of misfit dislocations (1,10).…”
Section: Resultssupporting
confidence: 90%
See 1 more Smart Citation
“…Results from the AFM analysis of sample oxidized 60 minutes are given in Figure 7. The Rms value of 1.47 nm measured on 10 μm square is close to data reported in literature (1,5,10). The cross-hatch pattern on Figure 7 is commonly observed on the surface of relaxed or partially relaxed SGOI layers because of misfit dislocations (1,10).…”
Section: Resultssupporting
confidence: 90%
“…According to the literature such a complete oxidation is not likely to be achieved after 60 min. Data reported earlier reveal that this is achieved usually after > 180 min dry oxidation at temperatures >900 o C [1,3,5,6]. Additional measurements done on 3 different points on the same sample, as shown on Figure 1b revealed that the shape and relative intensity of the Ge-Ge signal varies significantly indicating the formation of non-homogeneous layer.…”
Section: Resultsmentioning
confidence: 53%
“…16 This implies that during the condensation process, a high level of stress is generated in the SiGe layer. This stress can be relaxed by different mechanisms: compliance of the BOX, 17 generation of dislocations, 18,19 or roughening of the SiGe layer. 20 The creation of defects may have an important impact on the final electrical transport properties of the SGOI or GeOI layers.…”
mentioning
confidence: 99%
“…In addition, strainrelaxation behavior of the SiGe layer during oxidation was not definitely clarified. Bedell et al 12 presented that the strain relaxation of the SiGe-on-insulator formed by high-temperature oxidation is dislocation-mediated and the behavior of relaxation was in agreement with equilibrium theory, while Di et al 13 attributed the strain relaxation of SiGe-on-insulator only to the compliant substrate without introducing dislocations. Terzieva 14 also found that no threading dislocations were introduced in the SiGe for strain relaxation during the oxidation processes.…”
mentioning
confidence: 84%