Strain relaxation of pseudomorphic heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

“…9 For cubic lattices as unstrained Si or fully relaxed SiGe, the angle between ͓001͔ and ͓111͔, for instance, has a value of 54.736°. Compressive tetragonal strains in SiGe/ Si lead to smaller angles ͑54.736°−⌬ ͒ with ⌬ Ͻ⌬ ps where ⌬ ps denotes the maximum angular shift realized by the unrelaxed symmetrically stressed, pseudomorphic SiGe layer.…”

Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c-axis

“…12 These cavities have also been found to enhance the strain relaxation and to reduce the threading dislocation density of SiGe/Si heterostructures. 13 Therefore, studies have been carried out varying the conditions of implantation to understand their formation in different semiconductors. In Si, concurrently to cavity formation, interstitial-type defects lying on ͕113͖ planes ͑rodlike and ribbonlike defects͒ appear in the region of ion's end of range as the implantation temperature is increased.…”

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

“…The second approach is based on ion implantation of H or He into a strained SiGe layer, and subsequent thermal treatment [18][19][20]. This leads to bubble formation, facilitating dislocation loop nucleation close to the interface.…”

“…This leads to bubble formation, facilitating dislocation loop nucleation close to the interface. Except for the extra processing steps, this method appears very attractive, but seems to be limited to buffers with Ge content below 30% [19,20].…”