Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density

Гайдук, П. И.; Larsen, A. Nylandsted; Hansen, J. Lundsgaard

doi:10.1016/s0040-6090(00)00660-x

Cited by 45 publications

(24 citation statements)

References 26 publications

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“…Therefore, the rhombohedral SiGe shows a 200 times less defect density than conventional SiGe on Si(100) wafer under the SECCO etching tests. Conclusively, we confirmed that a new SiGe film growth technique of fully relaxed SiGe alloy layers yields low TD density epitaxially grown on sapphire substrate [27]. The TD etch-pit density of SiGe on sapphire decreases to 800/cm 2 as Ge content increases (see Figure 5(c)).…”

Section: Resultssupporting

confidence: 77%

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Kim

Park

Bae

et al. 2015

Advances in Condensed Matter Physics

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High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm 2 /V⋅s, p-type Ge: 2200 cm 2 /V⋅s, n-type Si: 1300 cm 2 /V⋅s, and n-type Ge: 3000 cm 2 /V⋅s at 10 16 per cm 3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on -plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on -plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm 2 /V⋅s which is between 350 cm 2 /V⋅s (Si) and 1550 cm 2 /V⋅s (Ge) at 6 × 10 17 /cm 3 doping concentration.

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Section: Resultssupporting

confidence: 77%

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Kim

Park

Bae

et al. 2015

Advances in Condensed Matter Physics

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“…This was achieved by using a lowtemperature (400-450 1C) buffer layer of Si whose thickness was 50-100 nm. These results were further supported by other publications [3][4][5][6][7][8]. In addition to the threading dislocations density, another important characteristic of relaxed films is the surface roughness [9].…”

supporting

confidence: 83%

Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Bolkhovityanov

Deryabin

Гутаковский

et al. 2006

Journal of Crystal Growth

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“…One of the promising methods of obtaining relaxed Ge x Si 1Àx films with a low density of threading dislocations in the surface layer is the use of a low-temperature buffer layer of silicon (LT-Si) grown on a Si substrate directly before the growth of the GeSi solid solution [1][2][3][4][5][6][7][8]. This method allows growing Ge x Si 1Àx films with the threading dislocation density of 10 5 -10 6 cm À2 if the value of ''x'' does not exceed 0.3 [8].…”

Section: Introductionmentioning

confidence: 99%